Publication

Advanced Semiconductor Technology Laboratory

International journal
2026
179 Stable High-Temperature Operation of Ultra-Wide Bandgap Al-rich AlGaN HFET D.-H. Yeo, H.-S. Kim and H.-Y. Cha Semiconductor Science and Technology, Vol 41, no. 2, Feb, 2026 DOI : 10.1088/1361-6641/ae4534, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
2025
178 Improved On-resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film J.-H. Yim, Jinhyeok Pyo, Myeongsu Chae, Sangyeon Pak, Hyungtak Kim and H.-Y. Cha IEEE Journal of the Electron Devices Society, vol. 13, p. 1138-1143, Nov, 2025 DOI : 10.1109/JEDS.2025.3632845, ISSN: 2168-6734 (Online) LINK
177 P-GaN/AlGaN/GaN E-mode HEMT with Extended MOS Gate M.-K. Lee, Gökhan Atmaca, Myeongsu Chae, Hyungtak Kim, H.-S. Kim, and H.-Y. Cha Electronics Letters, vol. 61(1), e750475, Nov, 2025 DOI : 10.1049/ell2.70475, ISSN: 0013-5194 (Print), 1350-911X (Online) LINK
176 Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry J. -S. Kim, S. -Y. Lim, G. -E. Choi, J. -K. Park, H. -Y. Cha, C. -H. Kwak, J. -H. Lim, Y. -B. Moon, and J. -H. Song Appl. Sci, 15(14), 7860, Jul, 2025 DOI : 10.3390/ app15147860, ISSN: 2076-3417 (Online) LINK
175 p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC H. -J. Oh, D. -I Oh, H. -S Kim, and H. -Y. Cha Journal of Semiconductor Technology and Science, vol. 25, no. 2, Apr, 2025 DOI : 10.5573/JSTS.2025.25.2.128, ISSN: 1598-1657 (Print), 2233-4866 (Online) LINK
174 T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range M. -G. Jeong, Gökhan Atmaca and H. -Y. Cha Results in Physics, Vol. 74, p.108294, Jul, 2025 DOI : 10.1016/j.rinp.2025.108294, ISSN: 2211-3797 LINK
2024
173 Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs M. -S. Chae, H. -Y. Cha and H. Kim IEEE Journal of the Electron Devices Society, Vol. 12, pp.581 - 586, Aug, 2024 DOI: 10.1109/JEDS.2024.3436820, ISSN: 2168-6734 (Online) LINK
172 Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process Y.-R. Yang, J.-H. Yim, H.-S. Kim and H.-Y. Cha Materials Science in Semiconductor Processing, Vol. 179, p.108483, Aug, 2024 DOI : 10.1016/j.mssp.2024.108483, ISSN : 1369-8001 (Print), 1873-4081 (Online) LINK
171 P-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor with a threshold voltage of 6 V D. -G. Kim, J. -H. Yim, M. -K. Lee, M. -S. Chae, H. Kim and H. -Y. Cha IEEE Electron Device Letters, Vol. 45(6), pp.972 - 975, Jun, 2024 DOI : 10.1109/LED.2024.3391619, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
170 Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer Gökhan Atmaca , H. -Y. Cha Micro and Nanostructures, Vol. 189, p.207802, May, 2024 DOI : 10.1016/j.micrna.2024.207802, ISSN: 2773-0131 (Print), 2773-0123 (Online) LINK
169 Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier Gökhan Atmaca and H.-Y. Cha Physica Scripta, Vol 99(3) p.035901, Feb, 2024 DOI : 10.1088/1402-4896/ad213f, ISSN: 1402-4896 LINK
2023
168 Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode S.-H. Lee and H.-Y. Cha Micromachines, Vol 14(11), p.2005, Oct, 2023 DOI : 10.3390/mi14112005, ISSN : 2072-666X LINK
167 Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication H.-J. Kim, J.-H. Yim, H.-T. Kim, and H.-Y. Cha Electronics, Vol. 12(20), p. 4347, Oct, 2023 DOI : 10.3390/electronics12204347, ISSN : 2079-9292 LINK
166 Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process W.-H. Jang, J.-H. Yim, H.-T. Kim, and H.-Y. Cha Electronics, Vol. 12(7), p. 1667, Mar, 2023 DOI : 10.3390/electronics12071667, ISSN : 2079-9292 LINK
165 High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs Van Cuong Nguyen, H.-Y. Cha and H.-T. Kim Sensors, Vol. 23(7), p.3465, Mar, 2023 DOI : 10.3390/s23073465, ISSN : 1424-8220 LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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