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친환경, 고효율 전력 소자 연구
고감도, 고반응속도 Gas sensor
초경량, 고감도 UV Sensor
Research projects
Professor
Professor
Research professor
Research professor
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Ph.D
M.S
Research assistant
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Publication
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International journal
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Domestic conference
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Notice
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2024
172
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
M. -S. Chae, H. -Y. Cha and H. Kim
IEEE Journal of the Electron Devices Society, Vol. 12, pp.581 - 586, Aug, 2024
DOI: 10.1109/JEDS.2024.3436820, ISSN : 2168-6734(Online)
LINK
171
P-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor with a threshold voltage of 6 V
D. -G. Kim, J. -H. Yim, M. -K. Lee, M. -S. Chae, H. Kim and H. -Y. Cha
IEEE Electron Device Letters, Vol. 45(6), pp.972 - 975, Jun, 2024
DOI: 10.1109/LED.2024.3391619, ISSN : 0741-3106(Print), 1558-0563(Online)
LINK
170
Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process
Y.-R. Yang, J.-H. Yim, H.-S. Kim and H.-Y. Cha
Materials Science in Semiconductor Processing, Vol. 179, p.108483, Aug, 2024
DOI: 10.1016/j.mssp.2024.108483, ISSN : 1873-4081(Online), 1369-8001(Print)
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169
Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier
Gökhan Atmaca and H.-Y. Cha
Physica Scripta, Vol 99(3) p.035901, Feb, 2024
DOI : 10.1088/1402-4896/ad213f, ISSN : 1402-4896
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2023
168
Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode
S.-H. Lee and H.-Y. Cha
Micromachines, Vol 14(11), p.2005, Oct, 2023
DOI : 10.3390/mi14112005, ISSN : 2072-666X
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167
Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
H.-J. Kim, J.-H. Yim, H.-T. Kim, and H.-Y. Cha
Electronics, Vol. 12(20), p. 4347, Oct, 2023
DOI : 10.3390/electronics12204347, ISSN : 2079-9292
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166
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process
W.-H. Jang, J.-H. Yim, H.-T. Kim, and H.-Y. Cha
Electronics, Vol. 12(7), p. 1667, Mar, 2023
DOI : 10.3390/electronics12071667, ISSN : 2079-9292
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165
High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs
Van Cuong Nguyen, H.-Y. Cha and H.-T. Kim
Sensors, Vol. 23(7), p.3465, Mar, 2023
DOI : 10.3390/s23073465, ISSN : 1424-8220
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2022
164
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
K.-S. Yim, S. Shin, C.-H. Jang and H.-Y. Cha
Materials, Vol. 15, p.7475, Oct, 2022
DOI : 10.3390/ma15062097, ISSN : 1996-1944
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163
Electrical Properties of 2H-Si Microwire Grown by Mixed-Source Hydride Vapor Phase Epitaxy
S. Shin, K.-H Kim, G.-S. Lee, J.-H Lee, H.-S. Ahn and H.-Y Cha
Results in Physics, Vol. 40, p.105857, Sep, 2022
DOI : 10.1016/j.rinp.2022.105857, ISSN : 2211-3797
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162
Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer
C.-H. Jang, Gokhan Ataca and H.-Y. Cha
Micromachines, Vol. 13, No. 8, p.1185, Jul, 2022
DOI : 10.3390/mi13081185, ISSN : 2072-666X
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161
Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs
S.-I. Cho, W.-H. Jang, H.-Y. Cha and H.-T. Kim
Journal of Electromagnetic Engineering and Science, Vol. 22, No. 3, pp. 291~295, May, 2022
DOI : 10.26866/jees.2022.3.r.89, ISSN : 2671-7255(Print), 2671-7263(Online)
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160
Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs
Gokhan Atamaca and H.-Y. Cha
Phys. Status Solidi A, p. 2100842, Apr, 2022
DOI : 10.1002/pssa.202100842, ISSN : 1862-6319(Online)
LINK
159
β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis
Gokhan Atamaca and H.-Y. Cha
Phys. Status Solidi A, p. 2100732 , Apr, 2022
DOI : 10.1002/pssa.202100732, ISSN : 1862-6319(Online)
LINK
158
Temperature- and Frequency-Dependent Ferroelectric Chracteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films
C.-H. Jang, H.-S. Kim, H.-T. Kim and H.-Y. Cha
Materials, vol. 15, no. 6, p. 2097, Mar, 2022
DOI : 10.3390/ma15062097, ISSN : 1996-1944
LINK
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