Advanced Semiconductor Technology Laboratory

International journal
171 P-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor with a threshold voltage of 6 V D. -G. Kim, J. -H. Yim, M. -K. Lee, M. -S. Chae, H. Kim and H. -Y. Cha IEEE Electron Device Letters ( Volume: 45, Issue: 6, June 2024) doi: 10.1109/LED.2024.3391619 LINK
170 Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process Y.-R. Yang, J.-H. Yim, H.-S. Kim and H.-Y. Cha Materials Science in Semiconductor Processing, Vol. 179, 108483, 2024 DOI: 10.1016/j.mssp.2024.108483 LINK
169 Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier Gökhan Atmaca and H.-Y. Cha Physica Scripta, 99 035901, 1 Feb 2024 DOI : 10.1088/1402-4896/ad213f LINK
168 Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode S.-H. Lee, H.-Y. Cha Micromachines 2023, 14(11), 28 October 2023 LINK
167 Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication H.-J. Kim, J.-H. Yim, H.-T. Kim, and H.-Y. Cha Electronics 2023, 12(20), p. 4347, Oct, 2023 LINK
166 Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process W.-H. Jang, J.-H. Yim, H.-T. Kim, and H.-Y. Cha Electronics, Vol. 12(7), p. 1667, Mar, 2023 DOI : 10.3390/electronics12071667, ISSN : 2079-9292 LINK
165 High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs Van Cuong Nguyen, H.-Y. Cha and H.-T. Kim Sensors, Vol. 23(7), p.3465, Mar, 2023 DOI : 10.3390/s23073465, ISSN : 1424-8220 LINK
164 Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors K.-S. Yim, S. Shin, C.-H. Jang and H.-Y. Cha Materials, Vol. 15, p.7475, Oct, 2022 DOI : 10.3390/ma15062097, ISSN : 1996-1944 LINK
163 Electrical Properties of 2H-Si Microwire Grown by Mixed-Source Hydride Vapor Phase Epitaxy S. Shin, K.-H Kim, G.-S. Lee, J.-H Lee, H.-S. Ahn and H.-Y Cha Results in Physics, Vol. 40, p.105857, Sep, 2022 DOI : 10.1016/j.rinp.2022.105857, ISSN : 2211-3797 LINK
162 Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer C.-H. Jang, Gokhan Ataca and H.-Y. Cha Micromachines, Vol. 13, No. 8, p.1185, Jul, 2022 DOI : 10.3390/mi13081185, ISSN : 2072-666X LINK
161 Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs S.-I. Cho, W.-H. Jang, H.-Y. Cha and H.-T. Kim Journal of Electromagnetic Engineering and Science, Vol. 22, No. 3, pp. 291~295, May, 2022 DOI : 10.26866/jees.2022.3.r.89, ISSN : 2671-7255(Print), 2671-7263(Online) LINK
160 Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs Gokhan Atamaca and H.-Y. Cha Phys. Status Solidi A, p. 2100842, Apr, 2022 DOI : 10.1002/pssa.202100842, ISSN : 1862-6319(Online) LINK
159 β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis Gokhan Atamaca and H.-Y. Cha Phys. Status Solidi A, p. 2100732 , Apr, 2022 DOI : 10.1002/pssa.202100732, ISSN : 1862-6319(Online) LINK
158 Temperature- and Frequency-Dependent Ferroelectric Chracteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films C.-H. Jang, H.-S. Kim, H.-T. Kim and H.-Y. Cha Materials, vol. 15, no. 6, p. 2097, Mar, 2022 DOI : 10.3390/ma15062097, ISSN : 1996-1944 LINK
157 On/Off-State Noise Characteristics in AlGaN/GaN HFET with AlN buffer layer K.-S. Im, U.-H. Choi, M.-H. Kim, J.-S. Choi, H.-S. Kim, H.-Y. Cha, S.-J. An and O.-H. Nam Applied Physics Letters, vol. 120, p. 012102, 2022 DOI : 10.1063/5.0074137, ISSN : 0003-6951 (print), 1077-3118 (online) LINK