Publication

Advanced Semiconductor Technology Laboratory

International journal
2008
34 Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection Ho-Young Cha, S. Soloviev, S. Zelakiewicz, P. Waldrab, and P. M. Sandvik IEEE Sens. J. vol. 8, no. 3, pp.233-237, 2008. DOI : 10.1109/JSEN.2007.913033, ISSN : 1558-1748 (Print), 1530-437X (Online) LINK
33 Fabrication of one-dimensional devices by a combination of AC dielectrophoresis and electrochemical deposition S. H. Hong, M. G. Kang, H.-Y. Cha, M. H. Son, J. S. Hwang, H. J. Lee, S. H. Sull, S. W. Hwang, D. Whang, and D. Ahn Nanotechnology, vol. 19, no. 10, 105305, 2008. DOI : 10.1088/0957-4484/19/10/105305, ISSN : 0957-4484 (Print), 1361-6528 (Online) LINK
2007
32 Study of dark currents in 4H-SiC UV APDs with separate absorption and multiplication regions S. Soloviev, H.-Y. Cha, J. Grande, and P. Sandvik Materials Science Forum, vol. 556-557, pp.953-956, 2007. DOI : 10.4028/www.scientific.net/MSF.556-557.953, ISSN : 0255-5476 (Print), 1662-9752 (Online) LINK
31 High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance Y. C. Choi, M. Pophristic, B. Peres, H.-Y. Cha, M. G. Spencer, L. F. Eastman Semiconductor Science and Technology, vol. 22, pp. 517-521, 2007. DOI : 10.1088/0268-1242/22/5/010, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
30 Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics G. Koley, L. Lakshmanan, H. Wu, and Ho-Young Cha Physica Status Solidi (a), vol. 204 (4), pp.1123-1129, 2007. DOI : 10.1002/pssa.200622516, ISSN : 1862-6300 (Print), 1862-6319 (Online) LINK
29 Ballistic electron acceleration negative-differential-conductivity devices B. Aslan, L. F. Eastman, W. J. Shaff, X. Chen, M. G. Spencer, H.-Y. Cha, A. Dyson, B. K. Ridley International journal of high speed electronics and systems, vol. 17, no. 1, pp.173-176, 2007. DOI : 10.1142/S0129156407004394, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
28 GaN ballistic negative-differential-conductivity diode for potential THz applications A. Dyson, B. K. Ridley, B. Aslan, H.-Y. Cha, X. Chen, W. J. Schaff, M. G. Spencer, and L. F. Eastman Physica Status Solidi (c), vol. 4 (2), pp.528-530. 2007. DOI : 10.1002/pssc.200673213, ISSN : 1862-6351 (Print), 1610-1642 (Online) LINK
2006
27 The effect of an Fe-doped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate Y. C. Choi, M. Pophristic, H.-Y. Cha, B. Peres, M. G. Spencer, and L. F. Eastman IEEE Transactions on Electron Devices, vol. 53, pp.2926-2931, 2006. DOI : 10.1109/TED.2006.885679, ISSN : 0018-9383 (Print), 1557-9646 (Online) LINK
26 Ballistic Electron Acceleration Negative-Defferential-Conductivity Lester F. Eastman, William J. Schaff, Brian K. Ridley, Ho-Young Cha, Xiaoding Chen, and Michael G. Spencer International journal of high speed electronics and systems, vol. 16, no. 2, pp.437-441, 2006. DOI : 10.1142/S012915640600376X, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
25 Gallium nitride nanowire nonvolatile memory device Ho-Young Cha, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer Virtual Journal of Nanoscale Science & Technology (edited compilation, reprinted from J. Appl. Phys.). vol.14, no. 5, 2006. DOI : 10.1063/1.2216488, ISSN : 1553-9644 LINK
24 Gallium nitride nanowire nonvolatile memory device Ho-Young Cha, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer Journal of Applied Physics. vol.100, no. 2, p.024307, 2006. DOI : 10.1063/1.2216488, ISSN : 0021-8979 (Print), 1089-7550 (Online) LINK
23 Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation Y. C. Choi, H.-Y. Cha, M. Chandrashar, C. I. Thomas, L. F. Eastman, and M. G. Spencer Material Science Forum, vol.527-529, pp.1199-1202, 2006. DOI : 10.4028/www.scientific.net/MSF.527-529.1199, ISSN : 0255-5476 (Print), 1662-9752 (Online) LINK
22 High yield GaN nanowire synthesis and field-effect transistor fabrication Huaqiang, Wu, Ho-Young Cha, Mvs Chandrashekhar, Michael G. Spencer and Goutam Koley Journal of Electronic Materials, vol.35, no. 4, pp.670-674, 2006 (co-first author). DOI : 10.1007/s11664-006-0118-9, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
21 Ohmic contacts using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures Ho-Young Cha, X. Chen, H. Wu, Y. Sun, M. G. Spencer, and L. F. Eastman Journal of Electronic Materials, vol.35, no. 3, pp.406-410, 2006. DOI : 10.1007/BF02690526, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
20 Fabrication and characterization of pre-aligned gallium nitride nanowrie field-effect transistors Ho-Young Cha, Huaqiang Wu, Mvs Chandrashekhar, Y. C. Choi, S. Chae, G. Koley, and M.G. Spencer Nanotechnolgy, vol.17, no. 5, pp.1264-1271, 2006. DOI : 10.1088/0957-4484/17/5/018, ISSN : 0957-4484 (Print), 1361-6528 (Online) LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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