Publication

Advanced Semiconductor Technology Laboratory

International journal
2006
22 High yield GaN nanowire synthesis and field-effect transistor fabrication Huaqiang, Wu, Ho-Young Cha, Mvs Chandrashekhar, Michael G. Spencer and Goutam Koley Journal of Electronic Materials, vol.35, no. 4, pp.670-674, 2006 (co-first author). DOI : 10.1007/s11664-006-0118-9, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
21 Ohmic contacts using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures Ho-Young Cha, X. Chen, H. Wu, Y. Sun, M. G. Spencer, and L. F. Eastman Journal of Electronic Materials, vol.35, no. 3, pp.406-410, 2006. DOI : 10.1007/BF02690526, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
20 Fabrication and characterization of pre-aligned gallium nitride nanowrie field-effect transistors Ho-Young Cha, Huaqiang Wu, Mvs Chandrashekhar, Y. C. Choi, S. Chae, G. Koley, and M.G. Spencer Nanotechnolgy, vol.17, no. 5, pp.1264-1271, 2006. DOI : 10.1088/0957-4484/17/5/018, ISSN : 0957-4484 (Print), 1361-6528 (Online) LINK
2005
19 Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures G. Koley, L. Lakshmanan, N. Tipirneni, M. Gaevski, A. Koudymov, G. Simin, Ho-Young Cha, M. G. Spencer, and A. Khan Japanese Journal of Applied Physics, vol. 44, no. 44, pp. L1348-L1351, 2005. DOI : 10.1143/JJAP.44.L1348, ISSN : 0021-4922 (Print), 1347-4065 (Online) LINK
18 A new 4H-SiC normally-off lateral channel vertical JFET (LC-VJFET) with extremely low power losses - source-inserted double-gate (SID-Gate) structure including supplementary highly doped region (SHDR) Y. C. Choi, H.-Y. Cha, L. F. Eastman, M. G. Spencer IEEE Transactions on Electron Devices, vol. 52, pp.1940-1948, 2005. DOI : 10.1109/TED.2005.854278, ISSN : 0018-9383 (Print), 1557-9646 (Online) LINK
17 Influence of low field mobility related issues on SiC MESFET performance Ho-Young Cha, Y. C. Choi, L. F. Eastman, M. G. Spencer, L. Ardaravicius, A. Matulionis,and O. Kiprijanovic Journal of Electronic Materials, vol. 34, no. 4, pp.330-335, 2005. DOI : 10.1007/s11664-005-0105-6, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
16 Design optimization of 600 V SiC SITs for high power and high frequency operation Y. C. Choi, H.-Y. Cha, L. F. Eastman, M. G. Spencer Semiconductor Science and Technology, vol. 20, pp. 193-201, 2005. DOI : 10.1088/0268-1242/20/2/017, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
15 Hot-electron transport in 4H-SiC L. Ardaravicius, A. Matulionis, O. Kiprijanovic, J. Liberis, H.-Y. Cha, L. F. Eastman, and M. G. Spencer Applied Physics Letters, vol. 86. p.022107, 2005. DOI : 10.1063/1.1851001, ISSN : 0003-6951 LINK
14 Important role of parasitic regions in electrical characteristics of SiC MESFETs Ho-Young Cha, Y. C. Choi, L. F. Eastman, M. G. Spencer, L. Ardaravicius, A. Matulionis,and O. Kiprijanovic Materials Science Forum, vol. 483-485, pp. 861-864, 2005. DOI : 10.4028/www.scientific.net/MSF.483-485.861, ISSN : 0255-5476 (Print), 1662-9752 (Online) LINK
2004
13 Hot-phonon temperature and lifetime in biased 4H-SiC A. Matulionis, J. Liberis, I. Marulioniene, Ho-Young Cha, L. F. Eastman, and M. G. Spencer Journal of Applied Physics., vol. 96, no. 11, pp.6439-6444, 2004. DOI : 10.1063/1.1812598, ISSN : 0021-8979 (Print), 1089-7550 (Online) LINK
12 Perturbation of charges in AlGaN/GaN heterostructures by UV lasesr illumination G. Koley, Ho-Young Cha, Jeonghyun Hwang, W. J. Schaff, L. F. Eastman, and M. G. Spencer Journal of Applied Physics, vol. 96, no. 8, pp.4253-4262, 2004. DOI : 10.1063/1.1794892, ISSN : 0021-8979 (Print), 1089-7550 (Online) LINK
11 Simulation study on breakdown behavior of field-Plate SiC MESFETs Ho-Young Cha, Y. C. Choi, Lester F. Eastman, Michael G. Spencer International journal of high speed electronics and systems, vol. 14, no. 3, pp.884-889, 2004. DOI : 10.1109/LECHPD.2004.1549704, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
10 Influence of the n diffusion layer on the channel current and the breakdown voltage in 4H-SiC SIT Young Chul Choi, Ho-Young Cha, Lester F. Eastman, Michael G. Spencer International journal of high speed electronics and systems, vol. 14, no. 3, pp.909-914, 2004. DOI : 10.1109/LECHPD.2004.1549708, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
9 Influence of Si3N4 passivation on surface trapping in SiC metal semiconductor field-effect transistors Ho-Young Cha, Y. C. Choi, R. M. Thompson, V. Kaper, J. R. Shealy, L. F. Eastman, and M. G. Spencer Journal of Electronic Materials., vol. 33 (8), pp.908-911, 2004. DOI : 10.1007/s11664-004-0219-2, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
8 Elimination of current instability and improvement of RF performances using Si3N4 passivation in SiC lateral epitaxy MESFETs Ho-Young Cha, Y. C. Choi, A. O. Konstantinov, P. Ericsson, L. F. Eastman, and M. G. Spencer Solid-State Electronics, vol. 48 (7), pp.1233-1237, 2004. DOI : 10.1016/j.sse.2004.01.005, ISSN : 0038-1101 LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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