Publication

Advanced Semiconductor Technology Laboratory

International journal
2022
157 On/Off-State Noise Characteristics in AlGaN/GaN HFET with AlN buffer layer K.-S. Im, U.-H. Choi, M.-H. Kim, J.-S. Choi, H.-S. Kim, H.-Y. Cha, S.-J. An and O.-H. Nam Applied Physics Letters, vol. 120, p. 012102, 2022 DOI : 10.1063/5.0074137, ISSN : 0003-6951 (print), 1077-3118 (online) LINK
2021
156 Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C V.C. Nguyen, H.-Y. Cha, H. Kim Journal of Semiconductor Technology and Science, vol. 21, no. 6, pp.412-417, 2021 DOI : 10.5573/JSTS.2021.21.6.412 LINK
155 Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy J.-S. Yoo, S.-K. Chang, G.-W. Jung, K.-H. Kim, T.-S. Kim, J.-H. Song, H.-Y. Cha and S.-W. Han Journal of nanoscience and nanotechnology, vol. 21, no. 11, pp. 5736-5741(6), Nov., 2021. DOI : 10.1166/jnn.2021.19491, ISSN : 1533-4880 (Print), 1533-4899 (Online) LINK
154 Proton Irradiation Effects on GaN-based Devices D.-M. Keum, H.-T. Kim and H.-Y. Cha Journal of Semiconductor Engineering, vol. 2, no. 1, pp.119-124, Mar, 2021. DOI : 10.22895/jse.2021.0002, ISSN : 2733-6719(Online) LINK
153 Room Temperature Operation of UV Photocatalytic Functionalizaed AlGaN/GaN Heterostructure Hydrogen Sensor J.-H. Choi, T.-H. Park, J.-H. Hur and H.-Y. Cha Nanomaterials, vol. 11, no. 6, p. 1422, 2021 DOI : 10.3390/nano11061422, ISSN : 2079-4991 LINK
152 Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature T.-A. Vuong, H.-Y. Cha and H.-T. Kim Micromachines, vol. 12, no. 5, p. 537, 2021 DOI : 10.3390/mi12050537, ISSN : 2072-666X LINK
151 Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition I.-H. Hwang, M.-J. Kang, H.-Y. Cha, and K.-S. Seo Crystals, vol, 11, no. 4, p. 405, 2021 DOI : 10.3390/cryst11040405, ISSN : 2073-4352 LINK
150 Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode T.-H. Kim, W.-H. Jang, J.-H. Yim and H.-Y. Cha Micromachines, vol. 12, no. 3, p. 291, 2021 DOI : 10.3390/mi.12030291, ISSN : 2072-666X LINK
149 Photoresponsivity Enhancement of AlGaN/GaN Heterojunction Phototransistor with ZnO Nanodot Coating Layer W.-H. Jang, J.-H. Choi, C.-Y. Han, H.-S. Yang and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 21, no. 1, pp. 80-83, 2021. DOI : 10.5573/JSTS.2021.21.1.080, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
148 Low-damage and Self-limiting (Al)GaN Etching Process through Atomic Layer Etchig Using O2 and BCl3 Plasma I.-H. Hwang, H.-Y. Cha and K.-S. Seo MDPI Coatings, vol. 11, no. 3, p. 268, 2021. DOI : 10.3390/coatings11030268, ISSN : 2079-6412 LINK
147 Thermal Boundary Resistance Extraction of GaN-on-Diamond Substratre from Transmission Line Method Pattern Using Micro-Raman Spectroscopy and Thermal Simulation R.-S. Ki, K.-S. Seo and H.-Y. Cha Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp. 4434-4437(4), 2021. DOI : 10.1166/jnn.2021.19414, ISSN : 1533-4880 (Print), 1533-4899 (Online) LINK
2020
146 P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process W.-H. Jang, K.-S. Seo and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 6, pp. 485-490, 2020. DOI : 10.5573/JSTS.2020.20.6.485, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
145 Recessed AlGaN/GaN Heterojunction-based Hydrogen Sensor Operated by Reverse Bias Mode J.-H. Choi, H. Kim, and H.-Y. Cha IEEE Sensors Journal, vol. 21, no. 2, pp. 1244-1249, 2020. DOI : 10.1109/JSEN.2020.3021417, ISSN : 1530-437X LINK
144 AlGaN/GaN Heterojunction Hydrogen Sensor Using ZnO-Nanoparticles/Pd Dual Catalyst Layer J.-H. Choi, T.-H. Park, J.-Y. Hur, and H.-Y. Cha Sensors and Actuators B: Chemical, vol. 325, p. 128946, 2020. DOI : 10.1016/j.snb.2020.128946, ISSN : 0925-4005 LINK
143 Improved Stability of AlGaN/GaN Heterojunction Schottky-Diode-Type Hydrogen Sensor Using Constant Source Operation J.-H. Choi, H. Kim, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 5, pp. 430-435, 2020. DOI : 10.5573/JSTS.2020.20.5.430, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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