Publication

Advanced Semiconductor Technology Laboratory

International journal
2020
142 Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs M.-J. Kang, H.-S. Kim, H.-Y. Cha and K.-S. Seo Crystals, vol. 10, no. 9, pp. 842, 2020. DOI : 10.3390/cryst10090842, ISSN : 2073-4352 LINK
141 PECVD SiNx Passivation for AlGaN/GaN HFETs with Ultra-Thin AlGaN Barrier H.-S. Kim, M.-J. Kang, W.-H. Jang, K.-S. Seo, H. Kim and H.-Y. Cha Solid State Electronics, vol. 173, p. 107876, 2020. DOI : 10.1016/j.sse.2020.107876, ISSN : 0038-1101 LINK
140 High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor J.-H. Choi, T. A. Vuong, H. Kim, and H.-Y. Cha Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4404-4408, 2020. DOI : 10.1166/jnn.2020.17786, ISSN : 1533-4880 (Print), 1533-4899 (Online) LINK
139 Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy H. Park, Y.-I. Na, S.-M. Lee, S.-J. Suh, Y.-S. Oh, J.-K. Lee, S. G. Kim, S.-W. Han, H.-Y. Cha, and J.-R. Yoon Advances in Polymer Technology, vol. 2020, p. 5601714, 2020. DOI : 10.1155/2020/4501714, ISSN : 0730-6679 (Print), 1098-2329 (Online) LINK
138 Filter-free AlGaN Photodiode with High Quantum Efficiency for Partial Discharge Detection T. T. T. Pham, J.-H. Choi, C.-H. Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 2, pp. 141-144, 2020. DOI : 10.5573/JSTS.2020.20.2.141, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
137 Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate H.-S. Kim, M.-J. Kang, J. J. Kim, K.-S. Seo, and H.-Y. Cha Materials, vol. 13, no. 7, p. 1538, 2020. DOI : 10.3390/ma13071538, ISSN : 1996-1944 LINK
136 The Effect of Edge-terminated Structure for Lateral AlGaN/GaN Schottky Barrier Diodes with Gated Ohmic Anode R.-S. Ki, J.-G. Lee, H.-Y. Cha, and K.-S. Seo Solid-State Electronics, vol. 166, p. 107768, 2020. DOI : 10.1016/j.sse.2020.107768, ISSN : 0038-1101 LINK
135 GaN Based Negative Capacitance Heterojunction Field-Effect Transistors with < 30 mV/dec Subthreshold Slope for Steep Switching Operation S.-W. Han, S.-K. Eom, M.-J. Kang, H.-S. Kim, K.-S. Seo, and H.-Y. Cha Results in Physics, vol. 16, p. 102950, 2020. DOI : 10.1016/j.rinp.2020.102950, ISSN : 2211-3797 LINK
2019
134 Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double-Heterostructure High-Electron Mobility Transistor (DH-HEMT) on Sapphire U. Choi, H.-S. Kim, K. Lee, D. Jung, T. Kwak, T. Jang, Y. Nam, B. So, M.-J. Kang, K.-S. Seo, M. Han, S. Choi, S. Lee, H.-Y. Cha, and O. Nam Physica Status Solidi (a), vol. 217, no. 7, p. 1900695, 2020. DOI : 10.1002/pssa.201900695, ISSN : 1862-6300 (Print), 1862-6319 (Online) LINK
133 Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions J.-H. Choi, H. Kim, H.-K. Sung, and H.-Y. Cha Sensors, vol. 19, no. 24, p. 5549, 2019. DOI : 10.3390/s19245549, ISSN : 1424-8220 LINK
132 Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator G. Cho, H.-Y. Cha, and H. Kim Materials, vol. 12, no. 23, p. 3968, 2019. DOI : 10.3390/ma12233968, ISSN : 1996-1944 LINK
131 Growth Behavior of GaN on AlN for Fully Coalesced Channel of AlN-based HEMT U. Choi, K. Lee, T. Kwak, T. Jang, Y. Nam, D. Jung, B. So, H.-S. Kim, H.-Y. Cha, M.-J. Kang, K.-S. Seo, and O. Nam Japanese Journal of Applied Physics, vol. 58, no. 12, p. 121003, 2019. DOI : 10.7567/1347-4065/ab4df3, ISSN : 0021-4922 (Print), 1347-4065 (Online) LINK
130 Characterization of High-Performance InGaAs QW-MOSFETs with Reliable Bi-layer HfOxNy Gate Stack S.-K. Eom, M.-W. Kong, H.-Y. Cha, and K.-S. Seo IEEE Journal of the Electron Devices Society, vol. 7, pp. 908-913, 2019. DOI : 10.1109/JEDS.2019.2934745, ISSN : 2168-6734 LINK
129 Recessed AlGaN/GaN UV Phototransistor W.-H. Jang, H.-S. Kim, M.-J. Kang, C.-H. Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 19, no. 2, pp. 184-189, 2019. DOI : 10.5573/JSTS.2019.19.2.184, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
128 Normally-off Recessed-gate AlGaN/GaN MOS-HFETs with Plasma Enhanced Atomic Layer Deposited AlOxNy Gate Insulator M.-J. Kang, S.-K. Eom, H.-S. Kim, C.-H. Lee, H.-Y. Cha, and K.-S. Seo Semiconductor Science and Technology, vol. 34, no. 5, p. 055018, 2019. DOI : 10.1088/1361-6641/ab10f1, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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