Publication

Advanced Semiconductor Technology Laboratory

International journal
2015
79 AlGaN/GaN Heterojunction Field-effect Transistor with Embedded Clamping Diode S.-W. Han, S.-H. Park, and H.-Y. Cha Applied Physics Express, vol. 8, no. 8, p. 081001, 2015. DOI : 10.7567/APEX.8.081001, ISSN : 1882-0778 (Print), 1882-0786 (Online) LINK
78 Au-free AlGaN/GaN Heterostructure Field-effect Transistor with Recessed Overhang Ohmic Contacts Using a Ti/Al Bilayer J.-G. Lee, H.-S. Kim, D.-H. Kim, S.-W. Han, K.-S. Seo, and H.-Y. Cha Semiconductor Science and Technology, vol. 30, no. 8, p. 085005, 2015. DOI : 10.1088/0268-1242/30/8/085005, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
77 AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated with Clamp Circuit to Enable Normally-off Operation S.-W. Han, S.-H. Park, J.-G. Lee, J. Lim, and H.-Y. Cha IEEE Electron Device Letters, vol. 36, no. 6, pp. 540-542, 2015. DOI : 10.1109/LED.2015.2427202, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
76 Extraction of the Interface Trap Density through the Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs Y. Kang, H.-Y. Cha, and H. Kim, S. Choi, D.-H. Kim Journal of the Korean Physical Society, vol. 66, no. 8, pp. 1291-1294, 2015. DOI : 10.3938/jkps.66.1291, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
75 Diode Bridge Embedded AlGaN/GaN Bi-directional Switch B.-R. Park, S.-W. Han, and H.-Y. Cha IEEE Electron Device Letters, vol. 36, no. 4, pp. 324-326, 2015. DOI : 10.1109/LED.2015.2398459, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
74 Stress-Sensors with High-Sensitivity Using the Combined Meandering-Patterns Chun-Hyung Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 15, no. 1, pp. 1-6, 2015. DOI : 10.5573/JSTS.2015.15.1.001, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
73 Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET J.-Y. Lee, B.-R. Park, J.-G. Lee, J. Lim, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 15, no. 1, pp. 16-21, 2015. DOI : 10.5573/JSTS.2015.15.1.016, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
2014
72 Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors D.-M. Keum, S. Choi, Y. Kang, J.-G.Lee, H.-Y. Cha, and H. Kim Journal of Semiconductor Technology and Science, vol. 14, no. 5, pp. 682-687, 2014. DOI : 10.5573/JSTS.2014.14.5.682, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
71 Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths Y. Park, J.-J. Kim, W. Chang, H.-G. Jang, J. Na, H. Lee, C.-H. Jun, H.-Y. Cha, J.-K. Mun, S.-C. Ko, and E.-S Nam Electronic Letters, vol. 50, no. 16, pp. 1164-1165, 2014. DOI : 10.1049/el.2014.1747, ISSN : 0013-5194 (Print), 1350-911X (Online) LINK
70 A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz M.-S Lee, D. kim, S. Eom, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 35, no. 10, pp. 995-997, 2014. DOI : 10.1109/LED.2014.2343233, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
69 Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor S.-W. Han, J.-G. Lee, C. -H. Cho, and H.-Y. Cha Applied Physics Express, vol. 7, no. 11, p. 111002, 2014. DOI : 10.7567/APEX.7.111002, ISSN : 1882-0778 (Print), 1882-0786 (Online) LINK
68 Development of Au-free process using Mo-based metallization for high power AlGaN/GaN-on-Si Heterostructure Field Effect Transistors S. Choi, J.-G. Lee, Y. Kang, C.-H. Cho, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol. 64, no. 4, pp. 526-531, 2014. DOI : 10.3938/jkps.65.526, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
67 AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode J.-Y. Lee, B.-R. Park, H. Kim, J. Kim, and H.-Y. Cha Electon. Mater. Lett., vol. 10, no. 6, pp. 1115-1120, 2014. DOI : 10.1007/s13391-014-4128-0, ISSN : 1738-8090 (Print), 2093-6788 (Online) LINK
66 High-Voltage and Low-Leakage-Current Gate Recessed Normally-off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 W. Choi, O. Seok, H. Ryu, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 35, no. 2, pp. 175-177, 2014. DOI : 10.1109/LED.2013.2293579, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
65 Improvement of Vth instability in normally-off GaN MIS-HEMTs employing PEALD-SiNx as an interfacial layer W. Choi, H. Ryu, N. Jeon, M. Lee, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters,, vol. 35, no. 1, pp. 30-32, 2014 DOI : 10.1109/LED.2013.2291551, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK

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  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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