Publication

Advanced Semiconductor Technology Laboratory

International journal
2014
69 Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor S.-W. Han, J.-G. Lee, C. -H. Cho, and H.-Y. Cha Applied Physics Express, vol. 7, no. 11, p. 111002, 2014. DOI : 10.7567/APEX.7.111002, ISSN : 1882-0778 (Print), 1882-0786 (Online) LINK
68 Development of Au-free process using Mo-based metallization for high power AlGaN/GaN-on-Si Heterostructure Field Effect Transistors S. Choi, J.-G. Lee, Y. Kang, C.-H. Cho, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol. 64, no. 4, pp. 526-531, 2014. DOI : 10.3938/jkps.65.526, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
67 AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode J.-Y. Lee, B.-R. Park, H. Kim, J. Kim, and H.-Y. Cha Electon. Mater. Lett., vol. 10, no. 6, pp. 1115-1120, 2014. DOI : 10.1007/s13391-014-4128-0, ISSN : 1738-8090 (Print), 2093-6788 (Online) LINK
66 High-Voltage and Low-Leakage-Current Gate Recessed Normally-off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 W. Choi, O. Seok, H. Ryu, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 35, no. 2, pp. 175-177, 2014. DOI : 10.1109/LED.2013.2293579, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
65 Improvement of Vth instability in normally-off GaN MIS-HEMTs employing PEALD-SiNx as an interfacial layer W. Choi, H. Ryu, N. Jeon, M. Lee, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters,, vol. 35, no. 1, pp. 30-32, 2014 DOI : 10.1109/LED.2013.2291551, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
64 Unidirectional AlGaN/GaN-on-Si HFETs with Reverse Blocking Drain J.-G. Lee, S.-W. Han, B.-R. Park, and H.-Y. Cha Applied Physics Express, vol. 7, no. 1, p. 014101, 2014. DOI : 10.7567/APEX.7.014101, ISSN : 1882-0778 (Print), 1882-0786 (Online) LINK
63 Metal free growth of graphene on quartz substrate using Chemical Vapor Deposition(CVD) J. Hwang, M. Kim, H.-Y. Cha, M.G. Spencer, and J.-W. Lee Journal of Nanoscience and Nanotechnology, vol. 14, no. 4, pp.2979-2983, 2014. DOI : 10.1166/jnn.2014.8583, ISSN : 1533-4880 (Print), 1533-4899 (Online) LINK
2013
62 Degradation Characteristics of High-voltage AlGaN/GaN-on-Si Heterostructure FETs under a Reverse Gate Bias Stress S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol. 63, no. 6, pp. 1208-1212, 2013. DOI : 10.3938/jkps.63.1208, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
61 Schottky barrier diode embeddd AlGaN/GaN switching transistor B.-R. Park, J.-Y. Lee, J.-G. Lee, D.-M. Lee, M.-K. Kim and H.-Y. Cha Semiconductor Science and Technology, vol.28, no.12, p. 125003, 2013. DOI : 10.1088/0268-1242/28/12/125003, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
60 Error analysis in stress measurement induced by the strain effects on (111)silicon C.-H. Cho and H.-Y. Cha Journal of the Korean Physical Society, vol.62, no.9, pp.1307-1311, 2013. DOI : 10.3938/jkps.62.1307, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
59 Nonvolatile Memory Devices Based on SiO2/GaN/AlGaN/GaN structures J.-G. Lee, S. Choi, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha Electronic Letters, vol. 49, no. 8, pp. 529-531, 2013. DOI : 10.1049/el.2012.4083, ISSN : 0013-5194 (Print), 1350-911X (Online) LINK
58 Bias-Stress-Induced Trapping Effect of High-Voltage Field-Plated AlGaN/GaN-on-Si Heterostructure FETs S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol.62, no. 6, pp.954-958, 2013. DOI : 10.3938/jkps.62.954, ISSN : 0374-4884 (Print), 1976-8524 (Online) LINK
57 Structural Effects on Heat Dissipation in InGaAs MHEMTS J.Noh, Y.Ryoo, N.Jeon, H.-Y.Cha, and K.-S.Seo Semiconductor Science and Technology. vol. 28, no.4, 045012, 2013. DOI : 10.1088/0268-1242/28/4/045012, ISSN : 0268-1242 (Print), 1361-6641 (Online) LINK
56 Normally-off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode B.-R. Park, J.-G. Lee, and H.-Y. Cha Applied Physics Express, vol. 6, no. 3, p. 031001, 2013. DOI : 10.7567/APEX.6.031001, ISSN : 1882-0778 (Print), 1882-0786 (Online) LINK
55 High Quality ICPCVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOSHFETs B.-R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo and H.-Y. Cha IEEE Electron Device Letters, vol. 34, no. 3, pp.354-356, 2013. DOI : 10.1109/LED.2012.2236678, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK

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  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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