International journal 1 페이지 | ASTL

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Advanced Semiconductor Technology Laboratory

International journal

2003

4

Gate field emission induced breakdown in power SiC MESFETs Ho-Young Cha, C. I. Thomas, L. F. Eastman, and M. G. Spencer IEEE Electron Device Letters, vol. 24, no. 9, pp571-573, 2003. DOI : 10.1109/LED.2003.815422, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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Reduced trapping effects and improved electrical performance in buried gate 4H-SiC MESFETs Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer IEEE Transactions on Electron Devices, vol. 50, no. 7, pp1569-1574, 2003. DOI : 10.1109/TED.2003.814982, ISSN : 0018-9383 (Print), 1557-9646 (Online)

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Influence of 4H-SiC Semi-insulating substrate purity on SiC Metal-Semiconductor Field-Effect Transistor Performance A. P. Zhang, L. B. Rowland, E. B. Kaminsky, J. B. Tucker, R. A. Beaupre, J. W. Kretchmer, J. L. Garrett, A. Vertiatchikh, G. Koley, H. Y. Cha, A. F. Allen, J. Cook, J. Foppes, B. J. Edward Journal of Electronic Materials, vol. 32, no. 05, pp.437-443, 2003. DOI : 10.1007/s11664-003-0174-3, ISSN : 0361-5235 (Print), 1543-186X (Online)

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Passivation effect on Channel Recessed 4H-SiC MESFETs Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer Materials Science Forum, vol. 433-436, pp.749-752, 2003. DOI : 10.4028/www.scientific.net/MSF.433-436.749, ISSN : 0255-5476 (Print), 1662-9752 (Online)

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