Publication

Advanced Semiconductor Technology Laboratory

International journal
2004
8 Hot-phonon temperature and lifetime in biased 4H-SiC A. Matulionis, J. Liberis, I. Marulioniene, Ho-Young Cha, L. F. Eastman, and M. G. Spencer Journal of Applied Physics., vol. 96, no. 11, pp.6439-6444, 2004. DOI : 10.1063/1.1812598, ISSN : 0021-8979 (Print), 1089-7550 (Online) LINK
7 Perturbation of charges in AlGaN/GaN heterostructures by UV lasesr illumination G. Koley, Ho-Young Cha, Jeonghyun Hwang, W. J. Schaff, L. F. Eastman, and M. G. Spencer Journal of Applied Physics, vol. 96, no. 8, pp.4253-4262, 2004. DOI : 10.1063/1.1794892, ISSN : 0021-8979 (Print), 1089-7550 (Online) LINK
6 Simulation study on breakdown behavior of field-Plate SiC MESFETs Ho-Young Cha, Y. C. Choi, Lester F. Eastman, Michael G. Spencer International journal of high speed electronics and systems, vol. 14, no. 3, pp.884-889, 2004. DOI : 10.1109/LECHPD.2004.1549704, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
5 Influence of the n diffusion layer on the channel current and the breakdown voltage in 4H-SiC SIT Young Chul Choi, Ho-Young Cha, Lester F. Eastman, Michael G. Spencer International journal of high speed electronics and systems, vol. 14, no. 3, pp.909-914, 2004. DOI : 10.1109/LECHPD.2004.1549708, ISSN : 0129-1564 (Print), 1793-6438 (Online) LINK
4 Influence of Si3N4 passivation on surface trapping in SiC metal semiconductor field-effect transistors Ho-Young Cha, Y. C. Choi, R. M. Thompson, V. Kaper, J. R. Shealy, L. F. Eastman, and M. G. Spencer Journal of Electronic Materials., vol. 33 (8), pp.908-911, 2004. DOI : 10.1007/s11664-004-0219-2, ISSN : 0361-5235 (Print), 1543-186X (Online) LINK
3 Elimination of current instability and improvement of RF performances using Si3N4 passivation in SiC lateral epitaxy MESFETs Ho-Young Cha, Y. C. Choi, A. O. Konstantinov, P. Ericsson, L. F. Eastman, and M. G. Spencer Solid-State Electronics, vol. 48 (7), pp.1233-1237, 2004. DOI : 10.1016/j.sse.2004.01.005, ISSN : 0038-1101 LINK
2 Analytical cascode model of buried-gate SiC MESFETs Ho-Young Cha, Y. C. Choi, L. F. Eastman, and M. G. Spencer Electronics Letters, vol. 40 (4), pp.271-273, 2004. DOI : 10.1049/el:20040169, ISSN : 0013-5194 (Print), 1350-911X (Online) LINK
1 Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors J. Hwang, W. J. Schaff, B. M. Green, H. Kim, Ho-Young Cha, and L. F. Eastman Solid-State Electronics, vol 48, pp. 363-366, 2004. DOI : 10.1016/S0038-1101(03)00324-1, ISSN : 0038-1101 LINK

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