International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2006

8

The effect of an Fe-doped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate Y. C. Choi, M. Pophristic, H.-Y. Cha, B. Peres, M. G. Spencer, and L. F. Eastman IEEE Transactions on Electron Devices, vol. 53, pp.2926-2931, 2006. DOI : 10.1109/TED.2006.885679, ISSN : 0018-9383 (Print), 1557-9646 (Online)

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7

Ballistic Electron Acceleration Negative-Defferential-Conductivity Lester F. Eastman, William J. Schaff, Brian K. Ridley, Ho-Young Cha, Xiaoding Chen, and Michael G. Spencer International journal of high speed electronics and systems, vol. 16, no. 2, pp.437-441, 2006. DOI : 10.1142/S012915640600376X, ISSN : 0129-1564 (Print), 1793-6438 (Online)

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6

Gallium nitride nanowire nonvolatile memory device Ho-Young Cha, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer Virtual Journal of Nanoscale Science & Technology (edited compilation, reprinted from J. Appl. Phys.). vol.14, no. 5, 2006. DOI : 10.1063/1.2216488, ISSN : 1553-9644

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5

Gallium nitride nanowire nonvolatile memory device Ho-Young Cha, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer Journal of Applied Physics. vol.100, no. 2, p.024307, 2006. DOI : 10.1063/1.2216488, ISSN : 0021-8979 (Print), 1089-7550 (Online)

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4

Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation Y. C. Choi, H.-Y. Cha, M. Chandrashar, C. I. Thomas, L. F. Eastman, and M. G. Spencer Material Science Forum, vol.527-529, pp.1199-1202, 2006. DOI : 10.4028/www.scientific.net/MSF.527-529.1199, ISSN : 0255-5476 (Print), 1662-9752 (Online)

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3

High yield GaN nanowire synthesis and field-effect transistor fabrication Huaqiang, Wu, Ho-Young Cha, Mvs Chandrashekhar, Michael G. Spencer and Goutam Koley Journal of Electronic Materials, vol.35, no. 4, pp.670-674, 2006 (co-first author). DOI : 10.1007/s11664-006-0118-9, ISSN : 0361-5235 (Print), 1543-186X (Online)

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2

Ohmic contacts using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures Ho-Young Cha, X. Chen, H. Wu, Y. Sun, M. G. Spencer, and L. F. Eastman Journal of Electronic Materials, vol.35, no. 3, pp.406-410, 2006. DOI : 10.1007/BF02690526, ISSN : 0361-5235 (Print), 1543-186X (Online)

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1

Fabrication and characterization of pre-aligned gallium nitride nanowrie field-effect transistors Ho-Young Cha, Huaqiang Wu, Mvs Chandrashekhar, Y. C. Choi, S. Chae, G. Koley, and M.G. Spencer Nanotechnolgy, vol.17, no. 5, pp.1264-1271, 2006. DOI : 10.1088/0957-4484/17/5/018, ISSN : 0957-4484 (Print), 1361-6528 (Online)

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