International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2007

5

Study of dark currents in 4H-SiC UV APDs with separate absorption and multiplication regions S. Soloviev, H.-Y. Cha, J. Grande, and P. Sandvik Materials Science Forum, vol. 556-557, pp.953-956, 2007. DOI : 10.4028/www.scientific.net/MSF.556-557.953, ISSN : 0255-5476 (Print), 1662-9752 (Online)

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High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance Y. C. Choi, M. Pophristic, B. Peres, H.-Y. Cha, M. G. Spencer, L. F. Eastman Semiconductor Science and Technology, vol. 22, pp. 517-521, 2007. DOI : 10.1088/0268-1242/22/5/010, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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3

Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics G. Koley, L. Lakshmanan, H. Wu, and Ho-Young Cha Physica Status Solidi (a), vol. 204 (4), pp.1123-1129, 2007. DOI : 10.1002/pssa.200622516, ISSN : 1862-6300 (Print), 1862-6319 (Online)

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2

Ballistic electron acceleration negative-differential-conductivity devices B. Aslan, L. F. Eastman, W. J. Shaff, X. Chen, M. G. Spencer, H.-Y. Cha, A. Dyson, B. K. Ridley International journal of high speed electronics and systems, vol. 17, no. 1, pp.173-176, 2007. DOI : 10.1142/S0129156407004394, ISSN : 0129-1564 (Print), 1793-6438 (Online)

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GaN ballistic negative-differential-conductivity diode for potential THz applications A. Dyson, B. K. Ridley, B. Aslan, H.-Y. Cha, X. Chen, W. J. Schaff, M. G. Spencer, and L. F. Eastman Physica Status Solidi (c), vol. 4 (2), pp.528-530. 2007. DOI : 10.1002/pssc.200673213, ISSN : 1862-6351 (Print), 1610-1642 (Online)

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