International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2008

8

Avalanche multiplication and impact ionization in separate absorption and multiplication 4H-SiC avalanche photodiodes W. Loh, J.P.R. David, S.I. Soloviev, H.-Y. Cha, P. M. Sandvik, J.S. Ng and C.M. Johnson Mat. Sci. Forum, vol. 600-603, pp.1207-1210, 2008. DOI : 10.4028/www.scientific.net/MSF.600-603.1207, ISSN : 0255-5476 (Print), 1662-9752 (Online)

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7

Observation of luminescence from defects in 4H-SiC APDs operating in avalanche breakdown S. Soloviev, P. Sandvik, A. Vertiatchikh, K. Dovidenko and H. Cha Mat. Sci. Forum, vol. 600-603, pp.1211-1214, 2008. DOI : 10.4028/www.scientific.net/MSF.600-603.1211, ISSN : 0255-5476 (Print), 1662-9752 (Online)

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6

4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency H. Liu, D. Mcintosh, X. Bai, H. Pan, M. Liu, J. C. Campbell, H.-Y. Cha IEEE Photonics Technology Letters. vol. 20, no. 18, pp.1551-1553, 2008. DOI : 10.1109/LPT.2008.928823, ISSN : 1041-1135 (Print), 1941-0174 (Online)

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5

Impact ionization coefficients in 4H-SiC W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H.-Y. Cha, P. M. Sandvik, C. M. Johnson, and J. P. R. David IEEE Trans. Electron Devices, vol. 55, no. 8, pp.1984-1990, 2008. DOI : 10.1109/TED.2008.926679, ISSN : 0018-9383 (Print), 1557-9646 (Online)

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4

Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes Ho-Young Cha and P. M. Sandvik Japanese Journal of Applied Physics, vol. 47, no. 7, pp.5423-5425, 2008. DOI : 10.1143/JJAP.47.5423, ISSN : 0021-4922 (Print), 1347-4065 (Online)

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3

Electrical properties of InGaN grown by molecular beam epitaxy W. J. Schaff, X. Chen, D. Hao, K. Matthews, T. Richards, L. F. Eastman, H. Lu, C. J.-H. Cho, and H.-Y. Cha Physica Status Solidi (b), vol. 245, no. 5, pp.868-872. 2008. DOI : 10.1002/pssb.200778710, ISSN : 0370-1972 (Print), 1521-3951 (Online)

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2

Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection Ho-Young Cha, S. Soloviev, S. Zelakiewicz, P. Waldrab, and P. M. Sandvik IEEE Sens. J. vol. 8, no. 3, pp.233-237, 2008. DOI : 10.1109/JSEN.2007.913033, ISSN : 1558-1748 (Print), 1530-437X (Online)

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1

Fabrication of one-dimensional devices by a combination of AC dielectrophoresis and electrochemical deposition S. H. Hong, M. G. Kang, H.-Y. Cha, M. H. Son, J. S. Hwang, H. J. Lee, S. H. Sull, S. W. Hwang, D. Whang, and D. Ahn Nanotechnology, vol. 19, no. 10, 105305, 2008. DOI : 10.1088/0957-4484/19/10/105305, ISSN : 0957-4484 (Print), 1361-6528 (Online)

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