International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2010

7

Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate J. Park, K. Lee, H.-Y. Cha and K. Seo Electronics Letters, vol. 46, no. 14, pp.1011-1012, 2010. DOI : 10.1049/el.2010.1485, ISSN : 0013-5194 (Print), 1350-911X (Online)

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6

DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures H. Kim, J. Lim and H.-Y. Cha, Journal of the Korean Physical Society, vol. 56, no. 5, pp.1523-1526, 2010. DOI : 10.3938/jkps.56.1523, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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5

Structural optimization of silicon carbide PIN avalanche photodiodes for UV detection H.-Y. Cha Journal of the Korean Physical Society, vol. 56, no. 2, pp.672-676, 2010. DOI : 10.3938/jkps.56.672, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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4

Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon C.-H. Cho, G. Choi and H.-Y. Cha IEICE Transactions on Electronics, vol. E93-C, no. 5, pp.640-643, 2010. DOI : 10.1587/transele.E93.C.640, ISSN : 0916-8524 (Print), 1745-1353 (Online)

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3

4H-SiC Avalanche Photodiodes for 280 nm UV Detection H.-Y. Cha, H.-K. Sung, H. Kim, C.-H. Cho and P. M. Sandvik IEICE Transactions on Electronics, vol. E93-C, no. 5, pp.648-650, 2010. DOI : 10.1587/transele.E93.C.648, ISSN : 0916-8524 (Print), 1745-1353 (Online)

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2

SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-mode Plasma-Enhanced Chemical Vapor Depositions J.-C. Her, H.-J. Cho, H.-Y. Cha, J.-E. Oh, C.-S. Yoo and K.-S. Seo Japanese Journal of Applied Physics. Vol. 49, no. 4, p.041002, 2010. DOI : 10.1143/JJAP.49.041002, ISSN : 0021-4922 (Print), 1347-4065 (Online)

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Thermal consideration in LED array design for LCD backlight unit applications B.-R. Park and H.-Y. Cha IEICE Electronics Express, vol.7, no.1, pp.40-46, 2010. DOI : 10.1587/elex.7.40, ISSN : 1349-2543 (Online)

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