International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2011

4

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications J.-G. Lee, H.-J. Lee, M. Lee, Y. Ryoo, J.-K. Mun, K.-S Seo, H.-Y. Cha Journal of the Korean Physical Society, vol. 59, no. 3, pp.2297-2300, 2011. DOI : 10.3938/jkps.59.2297, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts M. Lee, Y. Ryoo, J.-G. Lee, H.-Y. Cha, K. Seo Electronic Lett. vol. 47, pp.725-726, 2011. DOI : 10.1049/el.2011.1190, ISSN : 0013-5194 (Print), 1350-911X (Online)

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2

Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors J.-G. Lee, C.-H. Cho and H.-Y. Cha IEICE Trans. Electronics, vol. E94-C, no. 5, pp.842-845, 2011. DOI : 10.1587/transele.E94.C.842, ISSN : 0916-8524 (Print), 1745-1353 (Online)

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Errors in Pi-Coefficients Due to the Strain Effects in Resistor Stress Sensor on (001) Silicon C.-H. Cho and H.-Y. Cha IEICE Trans. Electronics, vol. E94-C, no. 5, pp.791-795, 2011. DOI : 10.1587/transele.E94.C.791, ISSN : 0916-8524 (Print), 1745-1353 (Online)

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