International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2013

9

Degradation Characteristics of High-voltage AlGaN/GaN-on-Si Heterostructure FETs under a Reverse Gate Bias Stress S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol. 63, no. 6, pp. 1208-1212, 2013. DOI : 10.3938/jkps.63.1208, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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8

Schottky barrier diode embeddd AlGaN/GaN switching transistor B.-R. Park, J.-Y. Lee, J.-G. Lee, D.-M. Lee, M.-K. Kim and H.-Y. Cha Semiconductor Science and Technology, vol.28, no.12, p. 125003, 2013. DOI : 10.1088/0268-1242/28/12/125003, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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7

Error analysis in stress measurement induced by the strain effects on (111)silicon C.-H. Cho and H.-Y. Cha Journal of the Korean Physical Society, vol.62, no.9, pp.1307-1311, 2013. DOI : 10.3938/jkps.62.1307, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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6

Nonvolatile Memory Devices Based on SiO2/GaN/AlGaN/GaN structures J.-G. Lee, S. Choi, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha Electronic Letters, vol. 49, no. 8, pp. 529-531, 2013. DOI : 10.1049/el.2012.4083, ISSN : 0013-5194 (Print), 1350-911X (Online)

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5

Bias-Stress-Induced Trapping Effect of High-Voltage Field-Plated AlGaN/GaN-on-Si Heterostructure FETs S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol.62, no. 6, pp.954-958, 2013. DOI : 10.3938/jkps.62.954, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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4

Structural Effects on Heat Dissipation in InGaAs MHEMTS J.Noh, Y.Ryoo, N.Jeon, H.-Y.Cha, and K.-S.Seo Semiconductor Science and Technology. vol. 28, no.4, 045012, 2013. DOI : 10.1088/0268-1242/28/4/045012, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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3

Normally-off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode B.-R. Park, J.-G. Lee, and H.-Y. Cha Applied Physics Express, vol. 6, no. 3, p. 031001, 2013. DOI : 10.7567/APEX.6.031001, ISSN : 1882-0778 (Print), 1882-0786 (Online)

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2

High Quality ICPCVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOSHFETs B.-R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo and H.-Y. Cha IEEE Electron Device Letters, vol. 34, no. 3, pp.354-356, 2013. DOI : 10.1109/LED.2012.2236678, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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1

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier with Gated Ohmic Anode J.-G. Lee, B.-R. Park, C.-H Cho, K.-S. Seo and H.-Y. Cha IEEE Electron Device Letters, vol. 34, no. 2, pp. 214-216, 2013. DOI : 10.1109/LED.2012.2235403, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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