International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2014

10

Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors D.-M. Keum, S. Choi, Y. Kang, J.-G.Lee, H.-Y. Cha, and H. Kim Journal of Semiconductor Technology and Science, vol. 14, no. 5, pp. 682-687, 2014. DOI : 10.5573/JSTS.2014.14.5.682, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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9

Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths Y. Park, J.-J. Kim, W. Chang, H.-G. Jang, J. Na, H. Lee, C.-H. Jun, H.-Y. Cha, J.-K. Mun, S.-C. Ko, and E.-S Nam Electronic Letters, vol. 50, no. 16, pp. 1164-1165, 2014. DOI : 10.1049/el.2014.1747, ISSN : 0013-5194 (Print), 1350-911X (Online)

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8

A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz M.-S Lee, D. kim, S. Eom, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 35, no. 10, pp. 995-997, 2014. DOI : 10.1109/LED.2014.2343233, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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7

Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor S.-W. Han, J.-G. Lee, C. -H. Cho, and H.-Y. Cha Applied Physics Express, vol. 7, no. 11, p. 111002, 2014. DOI : 10.7567/APEX.7.111002, ISSN : 1882-0778 (Print), 1882-0786 (Online)

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6

Development of Au-free process using Mo-based metallization for high power AlGaN/GaN-on-Si Heterostructure Field Effect Transistors S. Choi, J.-G. Lee, Y. Kang, C.-H. Cho, H.-Y. Cha, and H. Kim Journal of the Korean Physical Society, vol. 64, no. 4, pp. 526-531, 2014. DOI : 10.3938/jkps.65.526, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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5

AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode J.-Y. Lee, B.-R. Park, H. Kim, J. Kim, and H.-Y. Cha Electon. Mater. Lett., vol. 10, no. 6, pp. 1115-1120, 2014. DOI : 10.1007/s13391-014-4128-0, ISSN : 1738-8090 (Print), 2093-6788 (Online)

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4

High-Voltage and Low-Leakage-Current Gate Recessed Normally-off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 W. Choi, O. Seok, H. Ryu, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 35, no. 2, pp. 175-177, 2014. DOI : 10.1109/LED.2013.2293579, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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3

Improvement of Vth instability in normally-off GaN MIS-HEMTs employing PEALD-SiNx as an interfacial layer W. Choi, H. Ryu, N. Jeon, M. Lee, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters,, vol. 35, no. 1, pp. 30-32, 2014 DOI : 10.1109/LED.2013.2291551, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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2

Unidirectional AlGaN/GaN-on-Si HFETs with Reverse Blocking Drain J.-G. Lee, S.-W. Han, B.-R. Park, and H.-Y. Cha Applied Physics Express, vol. 7, no. 1, p. 014101, 2014. DOI : 10.7567/APEX.7.014101, ISSN : 1882-0778 (Print), 1882-0786 (Online)

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1

Metal free growth of graphene on quartz substrate using Chemical Vapor Deposition(CVD) J. Hwang, M. Kim, H.-Y. Cha, M.G. Spencer, and J.-W. Lee Journal of Nanoscience and Nanotechnology, vol. 14, no. 4, pp.2979-2983, 2014. DOI : 10.1166/jnn.2014.8583, ISSN : 1533-4880 (Print), 1533-4899 (Online)

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