International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2015

11

Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection Daniel J. Joe, J. Hwang, Christelle Johnsom, H.-Y. Cha, J.-W. Lee, Xiling Shen, Michael G. Spencer, Sandip Tiwari, and M. Kim Journal of Nanoscience and Nanotechnology, vol. 16, no. 1, pp. 144-151, 2016. DOI : 10.1166/jnn.2016.12042, ISSN : 1533-4880 (Print), 1533-4899 (Online)

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10

Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MIS Heterostructure FETs D.-M. Keum, H.-Y. Cha, and H. Kim IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 3362-3368, 2015. DOI : 10.1109/TNS.2015.2495209, ISSN : 0018-9499 (Print), 1558-1578 (Online)

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9

Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors S. Choi, Y. Kang, J. Kim, J. Kim, S.-J. Choi, D.-M. Kim, H.-Y. Cha, H. Kim, and D.-H. Kim Journal of Semiconductor Technology and Science, vol. 15, no. 5, pp. 497-503, 2015. DOI : 10.5573/JSTS.2015.15.5.497, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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8

Investigation of Flat Band Voltage Shift in Recessed-Gate GaN MOSHFETs with Post-Metallization-Annealing in Oxygen Atmosphere J.-G. Lee, H.-S. Kim, J.-Y. Lee, K.-S. Seo, and H.-Y. Cha Semiconductor Science and Technology, vol. 30, no. 11, p. 115008, 2015. DOI : 10.1088/0268-1242/30/11/115008, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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7

AlGaN/GaN Heterojunction Field-effect Transistor with Embedded Clamping Diode S.-W. Han, S.-H. Park, and H.-Y. Cha Applied Physics Express, vol. 8, no. 8, p. 081001, 2015. DOI : 10.7567/APEX.8.081001, ISSN : 1882-0778 (Print), 1882-0786 (Online)

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6

Au-free AlGaN/GaN Heterostructure Field-effect Transistor with Recessed Overhang Ohmic Contacts Using a Ti/Al Bilayer J.-G. Lee, H.-S. Kim, D.-H. Kim, S.-W. Han, K.-S. Seo, and H.-Y. Cha Semiconductor Science and Technology, vol. 30, no. 8, p. 085005, 2015. DOI : 10.1088/0268-1242/30/8/085005, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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5

AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated with Clamp Circuit to Enable Normally-off Operation S.-W. Han, S.-H. Park, J.-G. Lee, J. Lim, and H.-Y. Cha IEEE Electron Device Letters, vol. 36, no. 6, pp. 540-542, 2015. DOI : 10.1109/LED.2015.2427202, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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4

Extraction of the Interface Trap Density through the Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs Y. Kang, H.-Y. Cha, and H. Kim, S. Choi, D.-H. Kim Journal of the Korean Physical Society, vol. 66, no. 8, pp. 1291-1294, 2015. DOI : 10.3938/jkps.66.1291, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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3

Diode Bridge Embedded AlGaN/GaN Bi-directional Switch B.-R. Park, S.-W. Han, and H.-Y. Cha IEEE Electron Device Letters, vol. 36, no. 4, pp. 324-326, 2015. DOI : 10.1109/LED.2015.2398459, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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2

Stress-Sensors with High-Sensitivity Using the Combined Meandering-Patterns Chun-Hyung Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 15, no. 1, pp. 1-6, 2015. DOI : 10.5573/JSTS.2015.15.1.001, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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1

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET J.-Y. Lee, B.-R. Park, J.-G. Lee, J. Lim, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 15, no. 1, pp. 16-21, 2015. DOI : 10.5573/JSTS.2015.15.1.016, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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