Publication

Advanced Semiconductor Technology Laboratory

International journal
2016
13 Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate K. Ko, K. Lee, B. So, C. Heo, K. Lee, T. Kwak, S.-W. Han, H.-Y. Cha, and O. Nam Japanese Journal of Applied Physics, vol. 56, no. 1, p. 015502, 2017. DOI : 10.7567/JJAP.56.015502, ISSN : 0021-4922 (Print), 1347-4065 (Online) LINK
12 Normally-off AlGaN/GaN-on-Si MOS-HFET with a Monolithically Integrated Single Stage Inverter as a Gate Driver S.-W. Han, S.-H. Park, H.-S. Kim, M.-G. Jo, and H.-Y. Cha Electronics Letters, vol. 53, no. 3, pp. 198-199, 2017. DOI : 10.1049/el.2016.2813, ISSN : 0013-5194 (Print), 1350-911X (Online) LINK
11 Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs H.-S. Kim, S. Heo, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 16, no. 6, pp. 867-872, 2016. DOI : 10.5573/JSTS.2016.16.6.867, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
10 Normally-off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE S.-W. Han, Y. Noh, M.-G. Jo, S.-H. Kim, J.-E. Oh, K.-S. Seo, and H.-Y. Cha IEEE Electron Device Letters, vol. 37, no. 12, pp. 1613-1616, 2016. DOI : 10.1109/LED.2016.2621184, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
9 Patterned Ga2O3 for current blocking and optical scattering in visible light‐emitting diodes S.H. Kim, K.H. Lee, H.J. Park, Shahab Shervin, Mojtaba Asadirad, S.-N. Lee, J.S. Kwak, and J.-H. Ryou Physica Status Solidi (a), vol. 213, no. 10, pp. 2769-2772, 2016. DOI : 10.1002/pssa.201600240, ISSN : 1862-6300 (Print), 1862-6319 (Online) LINK
8 Visible Flip-Chip Light-Emitting Diodes on Flexible Ceramic Substrate With Improved Thermal Management S.H. Kim, Shivkant Singh, S.K. Oh, D.K. Lee, K.H. Lee, Shahab Shervin, Mojtaba Asadirad, Venkast Venkateswaran, Kathy Olenic, John A. Olenic, S.N. Lee, J.S. Kwak, Anastassios Mavrokefalos, and J.-H. Ryou IEEE Electron Device Letters, vol. 37, no. 5, pp. 615-617, 2016. DOI : 10.1109/LED.2016.2547877, ISSN : 0741-3106 (Print), 1558-0563 (Online) LINK
7 High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors J.-G. Lee, H.-S. Kim, K.-S. Seo, C.-H. Cho, and H.-Y. Cha Solid-State Electronics, vol. 122, pp. 32-36, 2016. DOI : 10.1016/j.sse.2016.04.016, ISSN : 0038-1101 LINK
6 V-band monolithic microwave integrated circuit with continuous wave output power of> 23.5 dBm using conventional AlGaN/GaN-on-Si structure D.-H. Kim, S.-K. Eom, M.-J. Kang, J.-S. Jeong, K.-S. Seo, and H.-Y. Cha Journal of Vacuum Science & Technology B, vol. 34, no. 4, p. 040602, 2016. DOI : 10.1116/1.4947005, ISSN : 2166-2754 (Print), 2166-2746 (Online) LINK
5 Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures H.J. Park, H.J. Bae, J.B. Park, J.S. Ha, T. Jeong, J.H. Baek, S.H. Kim, and J.-H. Ryou Journal of Vacuum Science & Technology B, vol. 34, no. 2, p. 021206, 2016. DOI : 10.1116/1.493941, ISSN : 2166-2754 (Print), 2166-2746 (Online) LINK
4 Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode S.-W. Han, S.-H. Park, H.-S. Kim, J. Lim, C.-H. Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 16, no. 2, pp. 221-225, 2016. DOI : 10.5573/JSTS.2016.16.2.221, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
3 Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor S.-H. Park, J.-G. Lee, C.-H. Cho, Y.-I. Choi, H. Kim and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 16, no. 2, pp. 215-220, 2016. DOI : 10.5573/JSTS.2016.16.2.215, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
2 Characterization of Stiffness Coefficients of Silicon Versus Temperature using “Posisson’s Ratio” Measurements C.-H. Cho, H.-Y. Cha, and H.-K. Sung Journal of Semiconductor Technology and Science, vol. 16, no. 2, pp. 153-158, 2016. DOI : 10.5573/JSTS.2016.16.2.153, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
1 Bendable III-N visible light-emitting diodes beyond mechanical flexibility: Theoretical study on quantum efficiency improvement and color tunability by external strain Shahab Shervin, S.-H. Kim, Mojtaba Asadirad, S. Yu. Karpov, Daria Zimina, and J.-H. Ryou ACS Photonics, vol. 3, no. 3, pp. 486-493, 2016. DOI : 10.1021/acsphotonics.5b00745, ISSN : 2330-4022 LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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