International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2017

13

Electrical Degradation on DC and RF Characteristics of Short Channel AlGaN/GaN-on-Si HEMT with Highly Doped Carbon Buffer D.-H. Kim, J.-S. Jeong, S.-K. Eom, J.-G. Lee, K.-S. Seo, and H.-Y. Cha Journal of the Korea Physical Society, vol. 71, no. 10, pp. 711-716, 2017. DOI : 10.3938/jkps.71.697, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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12

Epitaxial ZnO Gate Dielectrics Deposited by RF Sputter for AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors S. Yoon, S. M. Lee, H.-S. Kim, H.-Y. Cha, and J. Oh Semiconductor Science and Technology, vol. 33, no. 1, p. 015007, 2017. DOI : 10.1088/0268-1242/30/11/115008, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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11

High Performance E-mode AlGaN/GaN MIS-HEMT with Dual Gate Insulator Employing SiON and HfON I.-H. Hwang, S.-K. Eom, G.-H. Choi, M.-J. Kang, J.-G. Lee, H.-Y. Cha, and K.-S. Seo Physica Status Solidi (a), vol. 215, no. 10, p. 1700650, 2018. DOI : 10.1002/pssa.201700650, ISSN : 1862-6300 (Print), 1862-6319 (Online)

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10

Thermal Stability and Small-Signal Characteristics of AlGaN/GaN HEMTs with Gate Insertion Metal Layer for Millimeter-Wave Applications D.-H. Kim, S.-K. Eom, J.-S. Jeong, J.-G. Lee, K.-S. Seo, and H.-Y. Cha Journal of Vacuum Science & Technology B, vol. 35, no. 6, p. 060601, 2017. DOI : 10.1116/1.4998310, ISSN : 2166-2754 (Print), 2166-2746 (Online)

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9

Normally-Off AlGaN/GaN-on-Si Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor with Nitrogen-Incorporated Silicon Oxide Gate Insulator S.-H. Roh, S.-K Eom, G.-H. Choi, M.-J. Kang, D.-H. Kim, I.-H. Hwang, K.-S. Seo, J.-G. Lee, Y.-C. Byun, and H.-Y. Cha Journal of the Korea Physical Society, vol. 71, no. 4, pp. 185-190, 2017. DOI : 10.3938/jkps.71.185, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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8

Hydrogen Gas Sensor of Pd-Functionalised AlGaN/GaN Heterostructure with High Sensitivity and Low-Power Consumption J.-H. Choi, M.-G. Jo, S.-W. Han, H. Kim, S.-H. Kim, S. Jang, J.-S. Kim, and H.-Y. Cha Electronics Letters, vol. 53, no. 17, pp. 1200-1202, 2017. DOI : 10.1049/el.2017.2107, ISSN : 0013-5194 (Print), 1350-911X (Online)

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7

Normally-off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric H.-S. Kim, S.-W. Han, W.-H. Jang, C.-H. Cho, K.-S. Seo, J. Oh, and H.-Y. Cha IEEE Electron Device Letters, vol. 38, no. 8, pp. 1090-1093, 2017. DOI : 10.1109/LED.2017.2720719, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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6

AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster S.-W. Han, M.-G. Jo, H. Kim, C.-H. Cho, and H.-Y. Cha Solid-Sate Electronics, vol. 134, pp. 30-38, 2017. DOI : 10.1016/j.sse.2017.05.009, ISSN : 0038-1101

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5

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure M.-J. Kang, M.-S. Lee, G.-H. Choi, I.-H. Hwang, H.-Y. Cha, and K.-S. Seo Physica Status Solidi (a), vol. 214, no. 8, p. 1600726, 2017. DOI : 10.1002/pssa.201600726, ISSN : 1862-6300 (Print), 1862-6319 (Online)

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4

AlGaN/GaN-on-Si Power FET with Mo/Au Gate H.-S. Kim, W.-H. Jang, S.-W. Han, H. Kim, C.-H. Cho, J. Oh, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 204-209, 2017. DOI : 10.5573/JSTS.2017.17.2.204, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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3

A Study on Shear-stress Calibration by the Mid-point Measurements in +45/-45 Degree Semiconductor Resistor-pair C.-H. Cho, H.-Y. Cha, and H.-K. Sung Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 180-185, 2017. DOI : 10.5573/JSTS.2017.17.2.180, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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2

Structural and Optical Properties of AlN Grown on Nanopillar/Patterned SiO2 by Hydride Vapor Phase Epitaxy H. Son, Y. Lee, J.-H. Kim, J. Hwang, S. H. Kim, and D.-W. Jeon Thin Solid Films, vol. 626, pp. 66-69, 2017. DOI : 10.1016/j.tsf.2017.02.028, ISSN : 0040-6090

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1

Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors S. Yoon, S. M. Lee, J. Kim, H.-D. Lee, H.-Y. Cha, and J. Oh Semiconductor Science and Technology, vol. 32, no. 3, p. 035012, 2017. DOI : 10.1088/1361-6641/aa551f, ISSN : 0268-1242 (Print), 1361-6641 (Online)

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