International journal 1 페이지 | ASTL

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Advanced Semiconductor Technology Laboratory

International journal

2018

15

Gallium Nitride PIN Avalanche Photodiode with Double-step MESA Structure T. T. T. Pham, H. Shin, E. Chong, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 18, no. 5, pp. 645-649, 2018. DOI : 10.5573/JSTS.2018.18.5.645, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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14

Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma S.-K. Eom, M.-W. Kong, M.-J. Kang, J.-G. Lee, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 39, no. 11, pp. 1636-1639, 2018. DOI : 10.1109/LED.2018.2870176, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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13

Time-Dependent Dielectric Breakdown of Recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 Gate Oxide H.-S. Kim, S-K. Eom, K.-S. Seo, H. Kim, and H.-Y. Cha Vacuum, vol. 155, pp. 428-433, 2018. DOI : 10.1016/j.vacuum.2018.06.043, ISSN : 0042-207X

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12

SF6 Plasma Treatment for Leakage Current Reduction of AlGaN/GaN Heterojunction Field-Effect Transistors H.-S. Kim, K.-S. Seo, J. Oh, and H.-Y. Cha Results in Physics, vol. 10, pp. 248-249, 2018. DOI : 10.1016/j.rinp.2018.06.009, ISSN : 2211-3797

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11

Enhanced Hydrogen Sensitivity of AlGaN/GaN Heterojunction Gas Sensors by GaN-Cap Layer G. Chung, H.-Y. Cha, and H. Kim Electronic Letters, vol. 54, no. 14, pp. 896-897, 2018. DOI : 10.1049/el.2018.1167, ISSN : 0013-5194 (Print), 1350-911X (Online)

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10

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation T.-S. Kim, S.-Y. Lim, Y.-K. Park, G. Jung, J.-H. Song, H.-Y. Cha, and S.-W. Han Journal of the Korea Physical Society, vol. 72, no. 11, pp. 1332-1336, 2018. DOI : 10.3938/jkps.72.1332, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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9

Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure D.-H. Kim, H. Park, S.-K. Eom, R.-S. Ki, J.-S. Jeong, H.-Y. Cha, and K.-S. Seo IEEE Electron Device Letters, vol. 39, no. 7, pp. 995-998, 2018. DOI : 10.1109/LED.2018.2834223, ISSN : 0741-3106 (Print), 1558-0563 (Online)

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8

Analysis of Defect-Related Electrical Fatigue in 4H-SiC Avalanche Photodiodes E. Chong, B.-H. Park, H.-Y. Cha, K.-K. Choi, and D.-H. Lee IEEE Photonics Technology Letters, vol. 30, no. 10, pp. 899-902, 2018. DOI : 10.1109/LPT.2018.2823706, ISSN : 1041-1135

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7

Design Consideration of High Voltage Ga2O3 Vertical Schottky Barrier Diode with Field Plate J.-H. Choi, C.-H. Cho, and H.-Y. Cha Results in Physics, vol. 9, pp. 1170-1171, 2018. DOI : 10.1016/j.rinp.2018.04.042, ISSN : 2211-3797

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6

Effects of PECVD SiO2 Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs H.-S. Kim, W.-H. Jang, S.-K. Eom, S.-W. Han, H. Kim, C.-H. Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 18, no. 2, pp. 187-192, 2018. DOI : 10.5573/JSTS.2018.18.2.187, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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5

A Sensitivity-controllable Shear-stress Sensor with 2 Sets on +45/-45 Degree Semiconductor Resistor-sensor Pair C.-H. Cho, H.-Y. Cha, and H.-K. Sung Journal of Semiconductor Technology and Science, vol. 18, no. 2, pp. 139-145, 2018. DOI : 10.5573/JSTS.2018.18.2.139, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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4

Diode Quenching for Geiger Mode Avalanche Photodiode J.-I. Kang, H.-K. Sung, H. Kim, E. Chong, and H.-Y. Cha IEICE Electronics Express, vol. 15, no. 9, p. 20180062, 2018. DOI : 10.1587/elex.15.20180062, ISSN : 1349-2543

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3

Enhanced UV Absorption of GaN Photodiodes with a ZnO Quantum Dot Coating Layer J.-I. Kang, H. Kim, C.-Y. Han, H. Yang, S. R. Jeon, B. Park, and H.-Y. Cha Optics Express, vol. 26, no. 7, pp. 8296-8300, 2018. DOI : 10.1364/OE.26.008296, ISSN : 0146-9592 (Print), 1539-4794 (Online)

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2

Parastic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs G. Cho, H.-Y. Cha, and H. Kim Journal of Semiconductor Technology and Science, vol. 18, no. 1, pp. 78-83, 2018. DOI : 10.5573/JSTS.2018.18.1.078, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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1

Improved Interface Characteristics of Mo/SiO2/4H-SiC Metal-Oxide-Semiconductor with Post-Metallization Annealing J.-G. Lee, D.-H. Kim, S.-K. Eom, S.-H. Roh, K.-S. Seo, H.-S. Kim, H. Kim, H.-Y. Cha, and Y.-C. Byun Journal of the Korea Physical Society, vol. 72, no. 1, pp. 166-170, 2018. DOI : 10.3938/jkps.72.166, ISSN : 0374-4884 (Print), 1976-8524 (Online)

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