Publication

Advanced Semiconductor Technology Laboratory

International journal
2020
12 P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process W.-H. Jang, K.-S. Seo and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 6, pp. 485-490, 2020. DOI : 10.5573/JSTS.2020.20.6.485, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
11 Recessed AlGaN/GaN Heterojunction-based Hydrogen Sensor Operated by Reverse Bias Mode J.-H. Choi, H. Kim, and H.-Y. Cha IEEE Sensors Journal, vol. 21, no. 2, pp. 1244-1249, 2020. DOI : 10.1109/JSEN.2020.3021417, ISSN : 1530-437X LINK
10 AlGaN/GaN Heterojunction Hydrogen Sensor Using ZnO-Nanoparticles/Pd Dual Catalyst Layer J.-H. Choi, T.-H. Park, J.-Y. Hur, and H.-Y. Cha Sensors and Actuators B: Chemical, vol. 325, p. 128946, 2020. DOI : 10.1016/j.snb.2020.128946, ISSN : 0925-4005 LINK
9 Improved Stability of AlGaN/GaN Heterojunction Schottky-Diode-Type Hydrogen Sensor Using Constant Source Operation J.-H. Choi, H. Kim, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 5, pp. 430-435, 2020. DOI : 10.5573/JSTS.2020.20.5.430, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
8 Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs M.-J. Kang, H.-S. Kim, H.-Y. Cha and K.-S. Seo Crystals, vol. 10, no. 9, pp. 842, 2020. DOI : 10.3390/cryst10090842, ISSN : 2073-4352 LINK
7 PECVD SiNx Passivation for AlGaN/GaN HFETs with Ultra-Thin AlGaN Barrier H.-S. Kim, M.-J. Kang, W.-H. Jang, K.-S. Seo, H. Kim and H.-Y. Cha Solid State Electronics, vol. 173, p. 107876, 2020. DOI : 10.1016/j.sse.2020.107876, ISSN : 0038-1101 LINK
6 High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor J.-H. Choi, T. A. Vuong, H. Kim, and H.-Y. Cha Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4404-4408, 2020. DOI : 10.1166/jnn.2020.17786, ISSN : 1533-4880 (Print), 1533-4899 (Online) LINK
5 Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy H. Park, Y.-I. Na, S.-M. Lee, S.-J. Suh, Y.-S. Oh, J.-K. Lee, S. G. Kim, S.-W. Han, H.-Y. Cha, and J.-R. Yoon Advances in Polymer Technology, vol. 2020, p. 5601714, 2020. DOI : 10.1155/2020/4501714, ISSN : 0730-6679 (Print), 1098-2329 (Online) LINK
4 Filter-free AlGaN Photodiode with High Quantum Efficiency for Partial Discharge Detection T. T. T. Pham, J.-H. Choi, C.-H. Cho, and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 20, no. 2, pp. 141-144, 2020. DOI : 10.5573/JSTS.2020.20.2.141, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
3 Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate H.-S. Kim, M.-J. Kang, J. J. Kim, K.-S. Seo, and H.-Y. Cha Materials, vol. 13, no. 7, p. 1538, 2020. DOI : 10.3390/ma13071538, ISSN : 1996-1944 LINK
2 The Effect of Edge-terminated Structure for Lateral AlGaN/GaN Schottky Barrier Diodes with Gated Ohmic Anode R.-S. Ki, J.-G. Lee, H.-Y. Cha, and K.-S. Seo Solid-State Electronics, vol. 166, p. 107768, 2020. DOI : 10.1016/j.sse.2020.107768, ISSN : 0038-1101 LINK
1 GaN Based Negative Capacitance Heterojunction Field-Effect Transistors with < 30 mV/dec Subthreshold Slope for Steep Switching Operation S.-W. Han, S.-K. Eom, M.-J. Kang, H.-S. Kim, K.-S. Seo, and H.-Y. Cha Results in Physics, vol. 16, p. 102950, 2020. DOI : 10.1016/j.rinp.2020.102950, ISSN : 2211-3797 LINK

검색

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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