International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2021

10

Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C V.C. Nguyen, H.-Y. Cha, H. Kim Journal of Semiconductor Technology and Science, vol. 21, no. 6, pp.412-417, 2021 DOI : 10.5573/JSTS.2021.21.6.412

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9

Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy J.-S. Yoo, S.-K. Chang, G.-W. Jung, K.-H. Kim, T.-S. Kim, J.-H. Song, H.-Y. Cha and S.-W. Han Journal of nanoscience and nanotechnology, vol. 21, no. 11, pp. 5736-5741(6), Nov., 2021. DOI : 10.1166/jnn.2021.19491, ISSN : 1533-4880 (Print), 1533-4899 (Online)

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8

Proton Irradiation Effects on GaN-based Devices D.-M. Keum, H.-T. Kim and H.-Y. Cha Journal of Semiconductor Engineering, vol. 2, no. 1, pp.119-124, Mar, 2021. DOI : 10.22895/jse.2021.0002, ISSN : 2733-6719(Online)

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7

Room Temperature Operation of UV Photocatalytic Functionalizaed AlGaN/GaN Heterostructure Hydrogen Sensor J.-H. Choi, T.-H. Park, J.-H. Hur and H.-Y. Cha Nanomaterials, vol. 11, no. 6, p. 1422, 2021 DOI : 10.3390/nano11061422, ISSN : 2079-4991

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6

Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature T.-A. Vuong, H.-Y. Cha and H.-T. Kim Micromachines, vol. 12, no. 5, p. 537, 2021 DOI : 10.3390/mi12050537, ISSN : 2072-666X

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5

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition I.-H. Hwang, M.-J. Kang, H.-Y. Cha, and K.-S. Seo Crystals, vol, 11, no. 4, p. 405, 2021 DOI : 10.3390/cryst11040405, ISSN : 2073-4352

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4

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode T.-H. Kim, W.-H. Jang, J.-H. Yim and H.-Y. Cha Micromachines, vol. 12, no. 3, p. 291, 2021 DOI : 10.3390/mi.12030291, ISSN : 2072-666X

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3

Photoresponsivity Enhancement of AlGaN/GaN Heterojunction Phototransistor with ZnO Nanodot Coating Layer W.-H. Jang, J.-H. Choi, C.-Y. Han, H.-S. Yang and H.-Y. Cha Journal of Semiconductor Technology and Science, vol. 21, no. 1, pp. 80-83, 2021. DOI : 10.5573/JSTS.2021.21.1.080, ISSN : 1598-1657 (Print), 2233-4866 (Online)

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2

Low-damage and Self-limiting (Al)GaN Etching Process through Atomic Layer Etchig Using O2 and BCl3 Plasma I.-H. Hwang, H.-Y. Cha and K.-S. Seo MDPI Coatings, vol. 11, no. 3, p. 268, 2021. DOI : 10.3390/coatings11030268, ISSN : 2079-6412

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1

Thermal Boundary Resistance Extraction of GaN-on-Diamond Substratre from Transmission Line Method Pattern Using Micro-Raman Spectroscopy and Thermal Simulation R.-S. Ki, K.-S. Seo and H.-Y. Cha Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp. 4434-4437(4), 2021. DOI : 10.1166/jnn.2021.19414, ISSN : 1533-4880 (Print), 1533-4899 (Online)

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