International journal 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International journal

2022

8

Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors K.-S. Yim, S. Shin, C.-H. Jang and H.-Y. Cha Materials, Vol. 15, p.7475, Oct, 2022 DOI : 10.3390/ma15062097, ISSN : 1996-1944

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7

Electrical Properties of 2H-Si Microwire Grown by Mixed-Source Hydride Vapor Phase Epitaxy S. Shin, K.-H Kim, G.-S. Lee, J.-H Lee, H.-S. Ahn and H.-Y Cha Results in Physics, Vol. 40, p.105857, Sep, 2022 DOI : 10.1016/j.rinp.2022.105857, ISSN : 2211-3797

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6

Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer C.-H. Jang, Gokhan Ataca and H.-Y. Cha Micromachines, Vol. 13, No. 8, p.1185, Jul, 2022 DOI : 10.3390/mi13081185, ISSN : 2072-666X

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5

Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs S.-I. Cho, W.-H. Jang, H.-Y. Cha and H.-T. Kim Journal of Electromagnetic Engineering and Science, Vol. 22, No. 3, pp. 291~295, May, 2022 DOI : 10.26866/jees.2022.3.r.89, ISSN : 2671-7255(Print), 2671-7263(Online)

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4

Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs Gokhan Atamaca and H.-Y. Cha Phys. Status Solidi A, p. 2100842, Apr, 2022 DOI : 10.1002/pssa.202100842, ISSN : 1862-6319(Online)

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3

β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis Gokhan Atamaca and H.-Y. Cha Phys. Status Solidi A, p. 2100732 , Apr, 2022 DOI : 10.1002/pssa.202100732, ISSN : 1862-6319(Online)

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2

Temperature- and Frequency-Dependent Ferroelectric Chracteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films C.-H. Jang, H.-S. Kim, H.-T. Kim and H.-Y. Cha Materials, vol. 15, no. 6, p. 2097, Mar, 2022 DOI : 10.3390/ma15062097, ISSN : 1996-1944

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1

On/Off-State Noise Characteristics in AlGaN/GaN HFET with AlN buffer layer K.-S. Im, U.-H. Choi, M.-H. Kim, J.-S. Choi, H.-S. Kim, H.-Y. Cha, S.-J. An and O.-H. Nam Applied Physics Letters, vol. 120, p. 012102, 2022 DOI : 10.1063/5.0074137, ISSN : 0003-6951 (print), 1077-3118 (online)

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