Publication

Advanced Semiconductor Technology Laboratory

International journal
2025
5 Improved On-resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film J.-H. Yim, Jinhyeok Pyo, Myeongsu Chae, Sangyeon Pak, Hyungtak Kim and H.-Y. Cha IEEE Journal of the Electron Devices Society, Vol.13, p.1138-1143, Nov, 2025 DOI : 10.1109/JEDS.2025.3632845, ISSN : 2168-6734 (Online) LINK
4 P-GaN/AlGaN/GaN E-mode HEMT with Extended MOS Gate M.-K. Lee, Gökhan Atmaca, Myeongsu Chae, Hyungtak Kim, H.-S. Kim, and H.-Y. Cha Electronics Letters, Vol.61(1), e750475, Nov, 2025 DOI : 10.1049/ell2.70475, ISSN : 0013-5194 (Print), 1350-911X (Online) LINK
3 Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry J. -S. Kim, S. -Y. Lim, G. -E. Choi, J. -K. Park, H. -Y. Cha, C. -H. Kwak, J. -H. Lim, Y. -B. Moon, and J. -H. Song Appl. Sci, 15(14), 7860, Jul, 2025 DOI : 10.3390/ app15147860, ISSN : 2076-3417 (Online) LINK
2 p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC H. -J. Oh, D. -I Oh, H. -S Kim, and H. -Y. Cha Journal of Semiconductor Technology and Science, Vol.25, No.2, Apr, 2025 DOI : 10.5573/JSTS.2025.25.2.128, ISSN : 1598-1657 (Print), 2233-4866 (Online) LINK
1 T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range M. -G. Jeong, Gökhan Atmaca and H. -Y. Cha Results in Physics, Vol.74, p.108294, Jul, 2025 DOI : 10.1016/j.rinp.2025.108294, ISSN : 2211-3797 LINK

검색

  • IEEE

  • Hongik
    University

  • Alumni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
COPYRIGHT 2021 ASTL. ALL RIGHTS RESERVED.   Design by dsso.kr