Publication

Advanced Semiconductor Technology Laboratory

International journal
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
Title Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
Info T.-H. Kim, W.-H. Jang, J.-H. Yim and H.-Y. Cha
Name Micromachines, vol. 12, no. 3, p. 291, 2021
Link 관련링크 https://www.mdpi.com/2072-666X/12/3/291 419회 연결
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode