Publication

Advanced Semiconductor Technology Laboratory

International journal
β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis
Title β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis
Info Gokhan Atamaca and H.-Y. Cha
Name Phys. Status Solidi A, p. 2100732 , Apr, 2022
Link 관련링크 https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202100732 605회 연결
β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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