Publication

Advanced Semiconductor Technology Laboratory

International journal
Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer
Title Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer
Info C.-H. Jang, Gokhan Ataca and H.-Y. Cha
Name Micromachines, Vol. 13, No. 8, p.1185, Jul, 2022
Link 관련링크 https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9415067/ 1262회 연결
Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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