Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication > International journal

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Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
Title	Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
Info	H.-J. Kim, J.-H. Yim, H.-T. Kim, and H.-Y. Cha
Name	Electronics, Vol. 12(20), p. 4347, Oct, 2023
Link	https://www.mdpi.com/2079-9292/12/20/4347 233회 연결
Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication