Publication

Advanced Semiconductor Technology Laboratory

International journal
Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier
Title Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier
Info Gökhan Atmaca and H.-Y. Cha
Name Physica Scripta, Vol 99(3) p.035901, Feb, 2024
Link 관련링크 https://iopscience.iop.org/article/10.1088/1402-4896/ad213f 222회 연결
Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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