Publication

Advanced Semiconductor Technology Laboratory

International conference
2004
21 Simulation study on breakdown behavior of field-plate SiC ME… IEEE Lester Eastman Conference on High Performance Devices, Troy, NY, Aug. 4-6, 2004. Ho-Young Cha, Y. C. Choi, L. F. Eastman, and M. G. Spencer
20 Influence of the n diffusion layer on the channel current an… IEEE Lester Eastman Conference on High Performance Devices, Troy, NY, Aug. 4-6, 2004. Y. C. Choi, H.-Y. Cha, L. F. Eastman, and M. G. Spencer
19 Kelvin probe measurements to study surface donor model in Al… International Workshop on Nitride Semiconductors, Pittsburgh, PA, July 19-23, 2004. Goutam Koley, Ho-Young Cha, Jeonghyun Hwang, William Schaff, Lester F. Eastman, and Michael G. Spencer
18 Influence of low field mobility related issues on SiC MESFET… Electronic Materials Conference (EMC), Notre Dame, IN, June 23-25, 2004. Ho-Young Cha, Y. Choi, L.F. Eastman, M.G. Spencer, L. Ardaravicius, A. Matulionis,and O. Kiprijanovic
17 The effects of surface passivation treatments on large signa… Spring MRS Conference, San Francisco, April 12-16, 2004. Ho-Young Cha, Y. C. Choi, Lester F. Eastman, A. O. Konstantinov, C. I. Harris, P. Ericsson, M. G. Spencer
2003
16 Influence of surface structure on electrical characteristics… Device Research Conference, Salt Lake City, UT, June 23-25, 2003. Ho-Young Cha, C. I. Thomas, L. F. Eastman, and M. G. Spencer
15 Effect of SiNx passivation on surface and interface charge i… WOCSDICE workshop, Furigen, Switzerland, May 26-28, 2003. G. Koley, Ho-Young Cha, L. F. Eastman, and M. G. Spencer
14 Buried-gate 4H-SiC MESFETs WOCSEMMAD workshop, Atlanta, GA, February 17-19, 2003. Ho-Young Cha and M. G. Spencer
2002
13 The effect of channel recess and passivation on 4H-SiC MESFE… Fall MRS Conference, Boston, December 2-6, 2002. Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer
12 Effect of UV illumination and bias stress on surface barrier… Fall MRS Conference, Boston, December 2-6, 2002. G. Koley, Ho-Young Cha, V. Tilak, L. F. Eastman, and M. G. Spencer
11 Passivation effect on 4H-SiC MESFETs European Conference on SiC and Related Materials, Linkoping, Sweden, September 1-5, 2002. Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer
10 Channel recessed 4H-SiC MESFET with FT of 14.5 GHz and FMAX … IEEE Lester Eastman Conference on High Performance Devices, Newark, Delaware, August 6-8, 2002. Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer
9 Surface trapping effects observed in AlGaN/GaN HFETs and het… IEEE Lester Eastman Conference on High Performance Devices, Newark, Delaware, August 6-8, 2002. G. Koley, V. Tilak, Ho-Young Cha, L. F. Eastman, and M. G. Spencer
8 Modulation of surface barrier in AlGaN/GaN heterostructures International Workshop on Nitride Semiconductors, Aachen, Germany, July 22-25, 2002. G. Koley, Ho-Young Cha, V. Tilak, L. F. Eastman, and M. G. Spencer
7 Microwave SiC power MESFETs WOCSEMMAD workshop, Austin, February 18-20, 2002. Ho-Young Cha and M. G. Spencer

검색