Publication

Advanced Semiconductor Technology Laboratory

International conference
2013
81 Schottky Barrier Diode Embedded AlGaN/GaN-on-Si Heterojuncti… The 2nd International Conference on Advanced Electromaterials(ICAE), Jeju, Korea, November 12-15, 2013. B.-R. Park, J.-Y. Lee, and H.-Y. Cha LINK
80 Recessed AlGaN/GaN Power Transistors and Rectifiers The 2nd International Conference on Advanced Electromaterials(ICAE), Jeju, Korea, November 12-15, 2013. J.-G. Lee, B.-R. Park, S.-W. Han, J.-Y. Lee, and H.-Y. Cha LINK
79 Sacrificial Dielectric Layer Process for AlGaN/GaN HFETs International Workshop on Dielectric Thin Films for Future Electron Devices(IWDTF), Tokyo, Japan, November 7-9, 2013. J.-G. Lee, S.-W. Han, B.-R. Park, and H.-Y. Cha LINK
78 Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFET… International Conference on Solid State Devices and Materials(SSDM), Fukuoka, Japan, September 24-27, 2013. J.-G. Lee, S.-W. Han, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha LINK
77 Temperature-dependent Characteristics of AlGaN/GaN-on-Si Het… International Conference on Solid State Devices and Materials(SSDM), Fukuoka, Japan, September 24-27, 2013. D. M. Keum, S. H. choi, Y. J. Kang, J.-G. Lee, H.-Y. Cha, and H. Kim LINK
76 Improvement of Hysteresis Behavior in AlGaN/GaN MIS-HEMTs wi… International Conference on Solid State Devices and Materials(SSDM), Fukuoka, Japan, September 24-27, 2013. H. Ryu, W. Choi, N. Jeon, H.-Y. Cha, and K. S. Seo LINK
75 Suppress Current Collapse Effect by Optimizing 0.12um Gate S… International Conference on Solid State Devices and Materials(SSDM), Fukuoka, Japan, September 24-27, 2013. D. Kim, S. Eom, S. Han, H.-Y. Cha, and K. S. Seo LINK
74 Fully Recessed Schottky Barrier Diodes with a Digital Etchin… International Conference on Solid State Devices and Materials(SSDM), Fukuoka, Japan, September 24-27, 2013. N. Jeon, W. Choi, H. Ryu, H.-Y. Cha, and K. S. Seo LINK
73 AlGaN/GaN-on-Si Heterojunction Field Effect Transistor with … 10th International Conference on Nitride Semicondcutros(ICNS), Washington-DC, USA, August 25-30, 2013. B.-R. Park, J.-Y. Lee and H.-Y. Cha LINK
72 Low Leakage Current AlGaN/GaN-on-Si HFETs Using Gallium Oxid… 10th International Conference on Nitride Semicondcutros(ICNS), Washington-DC, USA, August 25-30, 2013. J.-G. Lee, S.-W. Han, B.-R. Park, K.-S. Seo and H.-Y. Cha LINK
71 Mo-Based, Au-Free Process for AlGaN/GaN-on-Si Heterostructur… 10th International Conference on Nitride Semicondcutros(ICNS), Washington-DC, USA, August 25-30, 2013. S. Choi, J.-G. Lee, H. kim, and H.-Y. Cha LINK
70 AlGaN/GaN-on-Si Rectifier with a Combinced Anode of Recessed… 10th International Conference on Nitride Semicondcutros(ICNS), Washington-DC, USA, August 25-30, 2013. N. Jeon, H. Ryu, W. Choi, H.-Y. Cha, and K.-S. Seo LINK
69 Optimization of Mo-based, Au-free Ohmic contact for AlGaN/Ga… Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Seoul, Korea, June 26-28, 2013. S. Choi, J.-G. Lee, H. kim, and H.-Y. Cha LINK
2012
68 Investigation of Non-Volatile Memory Effect in SiNx/GaN/AlGa… International Workshop on Nitride Semiconductors(IWN), Sapporo, Japan, October 14-19, 2012. J.-G. Lee, B.-R. Park, H. Kim, K-S. Seo, and H.-Y. Cha
67 Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Het… International Workshop on Nitride Semiconductors(IWN), Sapporo, Japan, October 14-19, 2012. S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim

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