International conference 1 페이지 | ASTL

Publication

Advanced Semiconductor Technology Laboratory

International conference

2005

13

Electrical and structural characterization of GaN nanowire b… International Semiconductor Device Research Symposium, Bethesda, MD, Dec 7-9, 2005. G. Koley, L. Lakshamanan, Ho-Young Cha, and Huaqiang Wu

12

Correlated electrical and structural properties of GaN nanow… Fall MRS Conference, Boston, Nov. 28 - Dec. 2, 2005. G. Koley, L. Lakshamanan, A. Khan, Huaqiang Yu, Ho-Young Cha, and M. G. Spencer

11

Nanoscale capacitance-voltage measurements on AlGaN/GaN hete… Fall MRS Conference, Boston, Nov. 28 - Dec. 2, 2005. G. Koley, L. Lakshamanan, N. Tipirneni, M. Gaevski, A. Khan, Ho-Young Cha, and M. G. Spencer

10

Influence of Small Doses of Gamma Irradiation on Transport a… 18th International Conference on Noise and Fluctuations(ICNF2005), Salamanca, Spain, Sep. 19-23, 2005. S. A.Vitusevich, M. V.Petrychuk, A. Kurakin, S. V.Danylyuk, A. E.Belyaev, H.-Y.Cha, L. F.Eastman, and N.Klein1

9

Design Considerations of a New 4H-SiC Enhancement-Mode Later… International Conference on Silicon Carbide Related Materials, Pittsburgh, PA, Sep. 18-23, 2005. Y. C. Choi, H.-Y. Cha, M. Chandrashar, C. I. Thomas, L. F. Eastman, and M. G. Spencer

8

Ultraviolet GaN/AlGaN multiple-quantum well light-emitting d… International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug. 28 - Sep. 2, 2005. Chul Huh, Ho-Young Cha, William Schaff, and Lester F. Eastman

7

Gallium nitride based ballistic electron acceleration negati… Device Research Conference, Santa Barbara, CA, June 20-22, 2005. Ho-Young Cha, Xiaodong Chen, William J. Schaff, Michael G. Spencer, Lester F. Eastman, Brian K. Ridley, James Pomeroy, Martin Kuball

6

Excellent surface morphology and low contact resistivity of … Electronic Materials Conference, Santa Barbara, CA, June 22-24, 2005. Ho-Young Cha, X. Chen, H. Wu, Y.-J. Sun, W. J. Schaff, M. G. Spencer, L. F. Eastman

5

High yield GaN nanowire FET fabrication and characterization Electronic Materials Conference, Santa Barbara, CA, June 22-24, 2005. Huaqiang Wu, Ho-Young Cha, Mvr Chandrashekhar, Goutam Koley, Michael G. Spencer

4

A new approach to maximizing the power handling capability i… 36th IEEE Power Electronics Specialists Conference (PESC), Recife, Brazil, June 12-16, 2005. Y. C. Choi, H.-Y. Cha, M. Chandrashekhar, L. F. Eastman, and M. G. Spencer

3

GaN nanowire field effect transistor electrical characteriza… ChinaNano 2005(China International Conference on Nanoscience and Technology), Beijing, China, June 9-11, 2005. H. Q. Wu, H.-Y.Cha, M. Chandrashekhar, G. Koley, M. G. Spencer

2

Improved Performance of 4H-SiC MESFETs under Small Doses of … Workshop on Compound Semiconductor Devices and Integragted Circuits in Europe (WOCSDICE), Cardiff, UK, May 16-18, 2005. S. A. Vitusevich, M. V. Petrychuk, A. M. Kurakin, S. V. Danyluyk, A. E. Belyaev, H. -Y. Cha, M. G. Spencer, L. F. Eastman, N. Klein

1

Fabrication and Characteristics of Pre-aligned GaN Nanowire … Nanoscale Devices and System Integration 2005, Huston, TX, April 4-6, 2005. Ho-Young Cha, Huaqiang Wu, Mvr Chandrashekhar, Goutam Koley, Michael G. Spencer

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