P-GaN Gated AlGaN/GaN Normally-off HFETs Fabricated with Two-step Selective Etching Process > International conference

P-GaN Gated AlGaN/GaN Normally-off HFETs Fabricated with Two-step Selective Etching Process
Title	P-GaN Gated AlGaN/GaN Normally-off HFETs Fabricated with Two-step Selective Etching Process
Info1	International Workshop on Nitride Semiconductors 2022 (2022 IWN), Berlin, Germany, Oct. 9 - 14, 2022
Info2	H.-J. Kim, W.-H. Jang, H.-J. Yim, H.-T. Kim, H.-S. Kim and H.-Y. Cha
Link	https://www.iwn2022.org/ 68회 연결
P-GaN Gated AlGaN/GaN Normally-off HFETs Fabricated with Two-step Selective Etching Process