p-GaN/AlGaN/GaN Heterojunction Field-effect Transistors Fabricated by Reactivation Annealing Process > International conference

p-GaN/AlGaN/GaN Heterojunction Field-effect Transistors Fabricated by Reactivation Annealing Process
Title	p-GaN/AlGaN/GaN Heterojunction Field-effect Transistors Fabricated by Reactivation Annealing Process
Info1	Y.-R. Yang, J.-H. Yim, D.-G. Kim, H.-J. Kim and H.-Y. Cha
Info2	14th International Conference on Nitride Semiconductors (ICNS), Fukuoka, Japan, Nov 12-17, 2023
Link	https://icns14.jp/ 60회 연결
p-GaN/AlGaN/GaN Heterojunction Field-effect Transistors Fabricated by Reactivation Annealing Process