Wider Gate Voltage Range of p-GaN/AlGaN/GaN HFET Employing Dual Dielectric Films for Gate Formation | |
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Title | Wider Gate Voltage Range of p-GaN/AlGaN/GaN HFET Employing Dual Dielectric Films for Gate Formation |
Info1 | M.-G. Jeong, W.-C. Choi, Gökhan Atmaca and H.-Y. Cha |
Info2 | 15th Topical Workshop on Heterostructure Microelectronics 2024, Miyagi, Japan, Aug 26(Mon) - 29(Thu) |
Link | https://www.rciqe.hokudai.ac.jp/twhm2024/ 33회 연결 |