Publication

Advanced Semiconductor Technology Laboratory

International conference
P-GaN Gated AlGaN/GaN HFET Fabricated by Reactivation Annealing Process
Title P-GaN Gated AlGaN/GaN HFET Fabricated by Reactivation Annealing Process
Info1 J.-H. Yim, Y.-R. Yang and H.-Y. Cha
Info2 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), Gangneung, Korea, July 7th – 10th
Link 관련링크 https://sites.google.com/view/awad2024/home 31회 연결
P-GaN Gated AlGaN/GaN HFET Fabricated by Reactivation Annealing Process

  • IEEE

  • Hongik
    University

  • Alimni

  • Professor

School of Electronic and Electrical Engineering
Hongik University
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