P-type GaN Ohmic Contact Using Annealed Mg Process > International conference

P-type GaN Ohmic Contact Using Annealed Mg Process
Title	P-type GaN Ohmic Contact Using Annealed Mg Process
Info1	M-J Kim, J-J Kim, N-H Kim, H-Y Cha
Info2	12th International Workshop on Nitride Semiconductors O'ahu, Hawai'i, November 3–8, 2024
Link	https://www.iwn2024.org/program/program-schedule 23회 연결
[Poster 187] P-type GaN Ohmic Contact Using Annealed Mg Process Min-Jeoung Kim1, Jeong-Jin Kim2, Nak-Hyeon Kim1, Ho-Young Cha1,2 1Hongik University, Seoul, Korea, Republic of. 2CHIPSK Corporation, Seoul, Korea, Republic of