Hexagonal Si Epilayer on 4H-SiC Substrate Grown by Mixed-Source HVPE | |
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Title | Hexagonal Si Epilayer on 4H-SiC Substrate Grown by Mixed-Source HVPE |
Info1 | 제 29회 한국반도체학술대회(The 29th Korean Conference on Semiconductors), Jeongseon, Korea, Jan. 24-26. |
Info2 | G.-S. Lee, K.-H. Kim, S.-H. Mun, S.-Y. Kim, S.-H. Mun, J.-H. Park, J. -H. Lee, H.-S. Ahn, H.-S. Jeon, H.-Y. Cha, W.-J. Lee, S.-M. Koo and S>-W. Kim |