Publication

Advanced Semiconductor Technology Laboratory

Domestic conference
Hexagonal Si Epilayer on 4H-SiC Substrate Grown by Mixed-Source HVPE
Title Hexagonal Si Epilayer on 4H-SiC Substrate Grown by Mixed-Source HVPE
Info1 제 29회 한국반도체학술대회(The 29th Korean Conference on Semiconductors), Jeongseon, Korea, Jan. 24-26.
Info2 G.-S. Lee, K.-H. Kim, S.-H. Mun, S.-Y. Kim, S.-H. Mun, J.-H. Park, J. -H. Lee, H.-S. Ahn, H.-S. Jeon, H.-Y. Cha, W.-J. Lee, S.-M. Koo and S>-W. Kim
Hexagonal Si Epilayer on 4H-SiC Substrate Grown by Mixed-Source HVPE