Development of Fluorine-based Low Damage Selective Etching Process for p-GaN/AlGaN/GaN HFET Fabrication > Domestic conference

Development of Fluorine-based Low Damage Selective Etching Process for p-GaN/AlGaN/GaN HFET Fabrication
Title	Development of Fluorine-based Low Damage Selective Etching Process for p-GaN/AlGaN/GaN HFET Fabrication
Info1	H.-J. Kim, J.-H. Yim, and H.-Y. Cha
Info2	2023년 반도체공학회 하계학술대회, The Institute of Semiconductor Engineers, Gyeongju Jul 17-19 2023
Link	https://event.theise.org/conference/ 75회 연결
Development of Fluorine-based Low Damage Selective Etching Process for p-GaN/AlGaN/GaN HFET Fabrication