| Title |
Current Enhancement of AlGaN/GaN Heterojunction Using Atomic Layer Deposition AlN Film |
| Authors |
장원호(Won-Ho Jang) ; 김태현(Tea-Hyun Kim) ; 임준혁(Jun-Hyeok Yim) ; 차호영(Ho-Young Cha) |
| DOI |
https://doi.org/10.5573/ieie.2021.58.5.14 |
| Keywords |
Gallium Nitride; HEMT; ALD-AlN; Current-boosting; Thin-AlGaN/GaN |
| Abstract |
The effects of an AlN film grown by atomic layer deposition on the thin AlGaN barrier AlGaN/GaN heterojunction structure were investigated. The AlN thin film induced stronger polarization effects on thin-AlGaN/GaN structure, which increased a 2-dimensional electron gas (2DEG) density. Using a 10 nm ALD AlN thin film on 4 nm of thin AlGaN/GaN epistructure, the 2DEG carrier density was drastically enhanced, which is comparable to a conventional 20 nm thick AlGaN structure. Further enhancement of 2DEG carrier density and current level was achieved after SiNx passivation was added on AlN film. In this study, the 2DEG characteristics of the AlGaN/GaN heterojunction structure can be dramatically improved by the atomic layer deposition method was confirmed. |