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Advanced Semiconductor Technology Laboratory

International journal
Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure
Title Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure
Info D.-H. Kim, H. Park, S.-K. Eom, R.-S. Ki, J.-S. Jeong, H.-Y. Cha, and K.-S. Seo
Name IEEE Electron Device Letters, vol. 39, no. 7, pp. 995-998, 2018.
Link 관련링크 https://ieeexplore.ieee.org/document/8355798/ 440회 연결
Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure