Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure | |
---|---|
Title | Ka-band MMIC Using AlGaN/GaN-on-Si with Recessed High-k Dual MIS structure |
Info | D.-H. Kim, H. Park, S.-K. Eom, R.-S. Ki, J.-S. Jeong, H.-Y. Cha, and K.-S. Seo |
Name | IEEE Electron Device Letters, vol. 39, no. 7, pp. 995-998, 2018. |
Link | https://ieeexplore.ieee.org/document/8355798/ 440회 연결 |