Publication

Advanced Semiconductor Technology Laboratory

International conference
2016
111 Leakage Current Reduction of Gate Ohmic Anode AlGaN/GaN Scho… International Conference on Solid State Devices and Materials(SSDM), Tsukuba, Japan, September 26-29, 2016. R.-S. Ki, I.-H. Hwang, H.-Y. Cha, and K.-S. Seo LINK
110 Monolithically integrated AlGaN/GaN-on-Si Power Switching De… URSI Asia-Pacific Radio Science Conference(AP-RASC), Seoul, Korea, August 21-25, 2016. H.-Y. Cha and S.-W. Han (Invited) LINK
109 AlGaN/GaN-on-Si power devices with Mo/Au gate Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Hakodate, Japan, July 04-06, 2016. H.-S. Kim, S.-W. Han, K.-S. Seo, and H.-Y. Cha LINK
108 MOS-HFET fabricated on AlGaN/GaN-on-Si(110) grown by NH3 MBE Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Hakodate, Japan, July 04-06, 2016. S.-W. Han, Y.-K. Noh, J.-E. Oh, K.-S. Seo, and H.-Y. Cha LINK
107 Threshold voltage engineering in AlGaN/GaN MISHEMT Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Hakodate, Japan, July 04-06, 2016. I.-H. Hwang, H.-Y. Cha, and K.-S. Seo LINK
106 High quality pseudo-ALD silicon oxynitride (SiON) for E-mode… Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Hakodate, Japan, July 04-06, 2016. M.-J. Kang, G.-H. Choi, H.-Y. Cha, and K.-S. Seo LINK
105 Improvement of electrical properties AlGaN/GaN MIS HEMTs wit… Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Hakodate, Japan, July 04-06, 2016. G.-H. Choi, M.-J. Kang, H.-Y. Cha, and K.-S. Seo LINK
2015
104 Integration of GaN power devices The 3rd International Conference on Advanced Electromaterials (ICAE 2015), Jeju, Korea, November 17-20, 2015. H.-Y. Cha (Invited) LINK
103 Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with Si… International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, September 27-30, 2015. D.-H. Kim, M.-J. Kang, S.-K. Eom, H.-Y. Cha, and K.-S. Seo LINK
102 High-Quality PECVD SiO2 Gate Oxide for Use in Normally-off A… International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, September 27-30, 2015. H.-S. Kim, J.-G. Lee, S.-H. Park, S.-W. Han, K.-S. Seo, and H.-Y. Cha LINK
101 Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx… International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, September 27-30, 2015. S.-K. Eom, R.-S. Ki, D.-H. Kim, H.-Y. Cha, and K.-S. Seo LINK
100 High-Quality PECVD SiO2 for Normally-off AlGaN/GaN-on-Si Rec… 11th International Conference on Nitride Semiconductors(ICNS), Beijing, China, August 30-September 4, 2015. H.-S. Kim, J.-G. Lee, S.-H. Park, S.-W. Han, K.-S. Seo, and H.-Y. Cha LINK
99 Influence of Post-Metallization Annealing on Threshold Volta… 11th International Conference on Nitride Semiconductors(ICNS), Beijing, China, August 30-September 4, 2015. M.-S. Lee, D.-H. Kim, I.-H, Hwang, H.-Y. Cha, and K.-S. Seo LINK
98 Normally-off Operation of AlGaN/GaN-on-Si Metal-Oxide-Semico… 11th International Conference on Nitride Semiconductors(ICNS), Beijing, China, August 30-September 4, 2015. S.-W. Han, S.-H. Park, J.-G. Lee, and H.-Y. Cha LINK
97 1.3 nm Effective Oxide Thickness Self-aligned InGaAs MOS-HEM… Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Jeju, Korea, June 29-July 1, 2015. S.-K. Eom, M.-J. Kang, H.-Y. Cha, and K.-S. Seo LINK

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